M A COM PH1214-300M Datasheet

Radar Pulsed Power Transistor, 300 Watts,
PH1214-300M
1.20-1.40 GHz, 150 µS Pulse, 10% Duty
Features
Q NPN Silicon Microwave Power Transistor Q Common Base Configuration Q Broadband Class C Operation Q High Efficiency Interdigitated Geometry Q Gold Metalization System Q Internal Input and Output Impedance Matching Q Hermetic Metal/Ceramic Package
Absolute Maximum Ratings @ 25 °C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation @ +45 °C
Storage Temperature
Junction Temperature
Symbol Rating Units
V
CES
V
EBO
IC
P
TOT
T
STG
Tj
90 V
3.0 V
21.0 A
620 W
-65 to +200 °C
200 °C
Outline Drawing
12/06/01
Rev. 0
Electrical Characteristics @ 25 °C
Parameter Symbol Min. Max. Units Test Conditions
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss RL 10 - dB
Load Mismatch Tolerance VSWR-T - 2:1 -
Load Mismatch Stability VSWR-S - 1.5:1 -
BV
R
CES
I
CES
TH(JC)
PO
GP
η
90 - V
- 10 mA
- .25 °C/W
300 - W
8.75 - dB
50 - %
IC=80 mA
VCE=40 V
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty
PH1214-300M
12/06/01
Sample Test Data
Rev. 0
(Broadband test fixture matched to 50 Ω.)
Freq.
Pin
Pout
(GHz)
(W)
1.2 40 406 10.06
1.3 40 355 9.48 59.3 15 0.04 15 412 0.65 9.12 0.32 58.2 S S S
1.4 40 335.8 9.24 58.4 14.4 0.06 16 378 0.51 8.75 0.35 56 S S S
(W)
Gain
(dB)
Eff.
Gain
(%)
(dB)
63.2 16.1 0.1 18 451 0.46 9.52 0.38 59.8 S S S
0.82
Ic (A)
Droop
(dB)
RL
(dB)
Pout
(W)
Note: ∆Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 40W.
P1dB Overdrive VSWR-S
Gain
Po (dB)
(dB)
Droop
(dB)
Eff.
1.5:1 2:1 2.5:1
(%)
Power Output Curves
PH1214-300M Pout vs. Pin
500
400
300
200
Pout (W)
100
0
0 102030405060
Pin (W)
1.2 GHz
1.3 GHz
1.4 GHz
2
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