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Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty
1.2 - 1.4 GHz
Features
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NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
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PHI21 4-25s
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Broadband Test Fixture Impedances
F(GHz)
1.20
1.30
1.40 2.2 - j3.4 3.0 + j0.2
Specifications Subject to Change Without Notice.
9-l 30
North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671
Fax (800) 618-8883 Fax +81 (03) 3226-1451
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2.1 - j4.5
2.1 - j3.9 3.6 + j0.4
3.7 + j0.9
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Europe:
TEST FIXTURE
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CIRCUIT
M/A-COM, Inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
50R
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Radar Pulsed Power Transistor, 25w
RF Test Fixture
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PHI21 4-25s
v2.00
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INPUT
50 OHMS
53
CD
r
ARTWilRK DIMENSIONS IN MILS
LIST
Cl c2
c3
Ql
PART-S
100 pF ATC SIZE A
50 UF 50 VOLTS
PH,l214-25M
BOARD TYPE: ROGERS 6010,5 ,025" THICK, ER = 10.5
OUTPUT
50 OHMS
Specifications Subject to Change Without Notice.
M/A-COM, inc.
North America: Tel. (800) 366-2266
Fax (800) 618-8883
Asia/Pacific: Tel. +81 (03) 3226-1671
n
Fax +81 (03) 3226-1451
Europe: Tel. +44 (1344) 869 595
n
Fax +44 (1344) 300 020
9-131