M A COM PH1214-25M Datasheet
Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M
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PH1214-25M
Radar Pulsed Power Transistor - 25 Watts,
1.20-1.40 GHz, 150µS Pulse, 10% Duty
Features
•
NPN Silicon Microwave Power Transistor
•
Common Base Configuration
•
Broadband Class C Operation
•
High Efficiency Interdigitated Geometry
•
Diffused Emitte r Ballasting Resistors
•
Gold Metalization System
•
Internal Input and Output Impedance Matching
•
Hermetic Metal/Ceramic Package
Description
M/A-COM’s PH1214-25M is a silicon bipolar NPN power
transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed
radars such as air traffic control and long-range weath er radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1214-25M can produce 25 watts of output
power with medium pulse length (150 µ S) at 10 percent duty
cycle. The transistor is hous ed in a 2-lead, rectangular metalceramic flange package, with internal input and output
impedance matching networks. In addition to L-band pulsed
radars, this high performance transistor can also be used in
pulsed digital communication systems.
Absolute Maximum Rating at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current (Peak) I
Total Power Dissipation
P
@ +25°C
Storage Temperature T
Junction Temperature T
CES
EBO
C
TOT
stg
j
60 V
3.0 V
2.8 A
58 W
-65 to +200 °C
200 °C
Outline Drawing
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
1
Broadband Test Fixture Impedance
F (GHz)
1.20 2.1 - j4.5 3.7 + j0.9
1.30 2.1 - j3.9 3.6 + j0.4
1.40 2.2 - j3.4 3.0 + j0.2
TEST FIXTURE
IN PUT
CIRCUIT
50
Ω
IF
(Ω)Z
Z
IF
TEST FIXTURE
OUTPUT
CIRCUIT
F
(Ω)
OF
50
Ω
Electrical Specifications at 25°C
Symbol Parameter Test Conditions Min Max Units
BV
I
CES
R
TH(JC)
P
G
η
R
VSWR-T Load Mismatch Tolerance V
VSWR-S Load Mismatch Stability V
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
Collector-Emitter Breakdow n IC = 25 mA 60 - V
CES
Collector-Emitter Breakdow n V
Thermal Resistance V
Input Power V
IN
Power Gain V
P
Collector Efficiency V
Input Return Loss V
L
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
= 40 V - 2.5 mA
CE
= 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz - 2.6 °C/W
CC
= 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz - 2.8 W
CC
= 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz 9.5 - dB
CC
= 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz 50 -
CC
= 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz 6 - dB
CC
= 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz - 3:1 -
CC
= 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz - 1.5:1 -
CC
%
V2.00
Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M
Test Fixture Electrical Schematic
Top View
Note:
1. Dimensions are in mils.
1
Electrical Schematic Parts List
C1, C2 100 pF ATC size A
C3 50 uF 50 Volts
Q1 PH1214-25M
Board Type Rogers 6010.5 .025” Thick, E
= 10.5
R
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
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