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Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty
1.2 - 1.4 GHz
Features
l NPN Silicon Microwave Power Transistor
l Common Base Configuration
l Broadband Class C Operation
l High Efficiency Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input Impedance Matching
l Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
.375= 213
(Y53:25)
PHI 214-20EL
Electrical Characteristics at 25°C
Broadband Test Fixture Impedances
F(GHr)
1.20
1.30
1.40
z,,(n) Z,,(Q)
2.1 -j4.5 3.7+jO.9
2.1 -j3.9 3.6+jO.4
2.2 -j3.4 3.O+jO.2
$
-!-
-
-
T:IST FIXTLjRE
53R
:WLlT
CIRCUIT
TCST FIXTSE
I
DCTPLIT /
CIRCLIIT
50R q
-
-
9-124
Specifications Subject to Change Without Notice.
NOWI America: Tel. (800) 366-2266
Fax (800) 618-8883
H Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
M/A-COM, inc.
Europe: Tel. +44 (1344) 869 595
n
Fax +44 (1344) 300 020
Radar Pulsed Power Transistor, 2OW
RF Test Fixture
PH1214-20EL
v2.00
“cc
Q
IN&T
50 OHMS
ARTWORK DIMENSIIINS IN MILS
LIST
Cl c2
c3
Ql
F'ARTS
100 pF ATC SIZE A
50 uF 50 VOLTS
PH1214-25M
BOARD TYPE: ROGERS 6010.5 ,025" THICK, ER = 10.5
w ou TPUT
cu50
OHMS
M/A-COM, Inc.
Specifications Subject to Change Without Notice.
North America: Tel. (800) 366-2266
Fax (800) 618-8883
Asia/Pacific: Tel. +81 (03) 3226-1671
n
Fax +81 (03) 3226-1451
Europe: Tel. +44 (1344) 869 595
n
Fax +44 (1344) 300 020
9-l 25