M A COM PH1214-100EL Datasheet

Radar Pulsed Power Transistor, lOOW, 2ms Pulse, 20% Duty

1.2 - 1.4 GHz

Features

_-_-. - -

NPN Silicon Microwave Power Transisror
Common Base Configuration
Broadband Class C Operation
High Effkiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors

Gold Metalization System
Internal Input Impedance Matching
Hermetic Metal/Ceramic Package

Absolute Maximum Ratings at 25°C

Parameter

Collector-EmitterVoltage
Emitter-Base Voltage

Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
StorageTemperature

I ~ ~~~~

Symbol

V

CES

V

EBO

‘c

P

TOT

TJ

I TSTG

Rating

75

3.0

14.1
214 w
200

1 -65 to +200 ) “C )

Units

V
V
A

“C

i

.I22 CXX~.~:O fC.25)

PH1214-IOOEL

E*,T:LE

L-J

.CW [G.iC:I.DG! !0.331 7

Electrical Characteristics at 25°C

Parameter Symbol Min

Collector-Emitter Breakdown Voltage BV,,, 75 - V

Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain

Collector Efficiency
lnout Return Loss
Overdrive Stability OD-S ­Load Mismatch Tolerance VSWR-T ­Load Mismatch Stablility VSWR-S -

ICES

R . .^,

P

OUT

GP

‘IC

RL

100 -

6.0 - dB

Max Units

10 mA

0.7

-

52 -

8 - dB

+l.O dB

3:l -

1.5:l -

Broadband Test Fixture Impedances

F(GHz)

1.20 2.6 - j3.8

1.30 3.0 - j3.4

1.40

z,,w

3.4 - j3.1

z,,m

3.0 - j2.7

2.4 - j2.6

1.9 - j2.5

Test Conditions

I,=50 mA

V,,=28 v

“C/W V-,=28 V, P,.,=25 W, 1==1.20, 1.30, 1.40 GHz

V,,=28 V, P,,=25 W, F=1.20, 1.30, 1.40 GHz

W

V,,=28 V, P,,=25 W, F=1.20, 1.30,1.40 GHz

V,,=28 V, P,,=25 W. F=l.20,1.30. 1.40 GHz

%

V-,=28 V, P,.,=25 W, F=1.20, 1.30, 1.40 GHz
V,,=28 V, P,,=25 W, F=1.20, 1.30.1.40 GHz
I/,,=28 V, P,,=25 W. F=l.20, 1.30.1.40 GHz
V,,=28 V, P,,=25 W, F=1.20, 1.30, 1.40 GHz

TEST FIXTURE TEST FIXTURE

:NPLIT 3’ ‘TPUT

CIRCUIT

502

5

-

-

ZIF

1

-

-1 - I’

2s;

v

CIRCUIT

5082

-

-

g-140

Specifications Subject to Change Without Notice.

North America: Tel. [phone]

Fax [phone] Fax [phone]

n Asia/Pacific: Tel. [phone]

MIA-COM, Inc.

Europe: Tel. [phone]

n

Fax [phone]

Radar Pulsed Power Transistor. 1 OOW

-~~

RF Test Fixture

BPN4NP JACKS

2 PLACES

f

?r: WPRCS
?JGERS 5010.5

7

PHI21 4-l OOEL

v2.01

GRCL!NE ?:NS

4 2LACES

--I

YEATSiNK,

73CSC255-ih

TRANSISTOR

73050255-04

‘RANSISTZ?

NORYL

74250125-11

C4P4CITSRS,

BRPSS
73050257-E

M/A-COM, Inc.

North America:

CIRCUIT

Specifications Subject to Change Without Notice.

Tel. [phone] H

Asia/Pacific: Tel. [phone]

Fax [phone]

II i M E N S I c! N S

Fax [phone]

Europe: Tel. [phone]

m

Fax [phone]

9-141