M A COM PH1214-0.85L Datasheet

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Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty

1.2 - 1.4 GHz

Features

NPN Silicon Microwave Power Transistor
Common Emitter Configuration
Broadband Class A Operation
Matrix Geometry
Diffused Emirter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic~MetalKeramic Package

Absolute Maximum Ratings at 25°C

Parameter Symbol

Collector-Emitter Voltage V
Collector-Emitter Voltage
Emitter-BaseVoltage
Collector Current (Peak)

Total Power Dissipation
JunctionTemperature ( T, ( 200
Storage Temperature T

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STG

Electrical Characteristics at 25°C

Rating Units

27 V
20 V

3.5

710

7.8 W

-65 to +200

V

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Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablility

%

RL
VSWR-T ­VSWR-S - 1.51 -

Broadband Test Fixture Impedances

F(GHz)

1.20

1.30

1.40

Specifications Subject to Change Without Notice.

9-112

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MIA-COM, Inc.

Europe: Tel. ~44 (1344) 869 595

Fax t44 (1344) 300 020

Radar Pulsed Power Transistor, 0.85W

RF Test Fixture

PHI 21400.85L

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INPUT

SO- OHMS

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ARTWORK DIMENSIONS IN MILS

PARTS

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LIST

GRDUn

116

I L

P

420

OUTPUT

50 OHMS

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Cl c2
c3 c4

CR1
Ql
Rl
R2
Sl
BOARD TYPE: ROGERS 6010.5 .025’ THICK, ER = 10.5

100 pF ATC SIZE A
68 UF 35 VOLTS

DIODE ECG5016A

PH1214-.85L
52 OHMS 2 WATTS
830 IIHMS l/4 WATT

DPDT

Specifications Subject to Change Without Notice.

M/A-COM, Inc.

North America: Tel. [phone]

Fax [phone]

Asia/Pacific: Te!. [phone]

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Fax [phone]

Europe: Tel. [phone]

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Fax [phone]

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