M A COM PH1113-100 Datasheet
Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty PH1113-100
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I
ZOF5
PH1113-100
Radar Pulsed Power Transistor - 100 Watts,
1.1-1.3 GHz, 3µs Pulse, 30% Duty
Features
•
NPN Silicon Microwave Power Transistor
•
Common Base Configuration
•
Broadband Class C Operation
•
High Efficiency Interdigitated Geometry
•
Diffused Emitte r Ballasting Resistors
•
Gold Metalization System
•
Internal Input and Output Impedance Matching
•
Hermetic Metal/Ceramic Package
Description
M/A-COM’s PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1113-100 can produce 25 watts of output
power with short puls e length (3µS) at 30 percent duty cycle.
The transistor is hou sed in a 2-lead rectangular metal-ceramic
flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
Absolute Maximum Rating at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current (Peak) I
Total Power Dissipation
P
@ +25°C
Storage Temperature T
Junction Temperature T
CES
EBO
C
TOT
stg
j
70 V
3.0 V
9.0 A
350 W
-65 to +200 °C
200 °C
Outline Drawing
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
1
Broadband Test Fixture Impedance
F (GHz)
1.1 5.8 - j3.4 3.0 - j1.7
1.2 5.6 - j1.8 3.0 - j1.5
1.3 5.9 - j0.4 2.8 - j1.3
TEST FIXTUR E
IN PUT
CIRCUIT
0
Ω
F
(Ω)Z
Z
IF
TEST FIXTUR E
OUTPUT
CIRCUIT
(Ω)
OF
50
Ω
Electrical Specifications at 25°C
Symbol Parameter Test Conditions Min Max Units
BV
I
CES
R
TH(JC)
P
G
η
RL Input Return Loss V
VSWR-T Load Mismatch Tolerance V
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
Collector-Emitter Breakd own Voltage IC = 5 mA 70 - V
CES
Collector-Emitter Leakage Current V
Thermal Resistance V
Input Power V
IN
Power Gain V
P
Collector Efficiency V
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
= 32 V - 10.0 mA
CE
= 32V, PO = 100 W, f = 1100, 1200, 1300 MHz - 0.5 °C/W
CC
= 32V, PO = 100 W, f = 1100, 1200, 1300 MHz - 16 W
CC
= 32V, PO = 100 W, f = 1100, 1200, 1300 MHz 8.0 - dB
CC
= 32V, PO = 100 W, f = 1100, 1200, 1300 MHz 52 -
CC
= 32V, PO = 100 W, f = 1100, 1200, 1300 MHz 9 - dB
CC
= 32V, PO = 100 W, f = 1100, 1200, 1300 MHz - 3:1 -
CC
%
V2.00
Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty PH1113-100
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
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