M A COM PH1090-75L Datasheet

PH1090-75L

AVIONICS PULSED POWER TRANSISTOR

M/A-COM PHI, INC.

75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY

FEATURES OUTLINE DRAWING

• Designed for Pulsed Avionics Applications

• NPN Silicon Microwave Power Transistor

• Common Base Configuration

• Broadband Class C Operation

• Diffused Emitter Ballasting Resistors

• Gold Metalization System

• Internal Input and Output Impedance Matching

• Hermetic Metal/Ceramic Package

ABSOLUTE MAXIMUM RATINGS AT 25°C

Parameter Symbol Rating Units

Collector-Emitter Voltage V

Emitter-Base Voltage V

Collector Current (Peak) IC 6 A

Total Power Dissipation PD 160 W

Storage Temperature T

Junction Temperature TJ 200 °C

70 V

CES

3.0 V

EBO

-65 to +200 °C

STG

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter Symbol Min Max Units Test Conditions

Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance R

Output Power P

Power Gain GP 9 - dB VCC=45 V, P

Collector Efficiency

Input Return Loss RL 8 - dB VCC=45 V, P

Load Mismatch Tolerance VSWR-T - 3:1 - VCC=45 V, P

Load Mismatch Stability VSWR-S - 1.5:1 - VCC=45 V, P

BV

70 - V IC=35mA

CES

I

- 3.5 mA VCE=40V

CES

- 1.5 °C/W VCC=45 V, P

TH(JC)

75 - W VCC=45 V, Pin=9 W, F=1.03, 1.09 GHz

OUT

η

C

45 - % V

=45 V, P

CC

=75 W, F=1.03 1.09 GHz

out

=75 W, F=1.03, 1.09 GHz

out

=75 W, F=1.03, 1.09 GHz

out

=75 W, F=1.03, 1.09 GHz

out

=75 W, F=1.03, 1.09 GHz

out

=75 W, F=1.03, 1.09 GHz

out

BROADBAND TEST FIXTURE IMPEDANCE

F (MHz)

1030 2.6 - j6 9.4 + j2
1090 2.3 - j5.6 11 + j0.2

Z IF (Ω) Z OF (Ω)

M/A-COM POWER HYBRIDS OPERATION · 1742 CRENSHAW BLVD · TORRANCE, CA 90501 [phone] · FAX [phone]

M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS181 Rev 04/11/97