M A COM PH1090-350L Datasheet
Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-350L
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PH1090-350L
Avionics Pulsed Power Transistor - 350 Watts,
1030-1090 MHz, 250µs Pulse, 10% Duty
Features
•
NPN Silicon Microwave Power Transistor
•
Common Base Configuration
•
Broadband Class C Operation
•
High Efficiency Interdigitated Geometry
•
Diffused Emitte r Ballasting Resistors
•
Gold Metalization System
•
Internal Input and Output Impedance Matching
•
Hermetic Metal/Ceramic Package
Description
M/A-COM’s PH1090-350L is a silicon bipolar NPN power
transistor intended for use in L-band, 1.2 - 1.4 GHz avionics
equipment such as IFF, mode-S and TCAS systems . Designed
for common-base, class C, broadband pulsed power applications, the PH1090-350L delivers 7.5 dB of gain at 350 watts of
output power when operating with long pulse length (250µS), at
10 percent duty cycle. The transistor is housed in a 2-lead,
rectangular metal-ceramic flange package, with internal input
and output impedance matching networks. Diffused emitter
ballast resistors and gold metalization assure ruggedness and
long-term reliability.
Absolute Maximum Rating at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current (Peak) I
Total Power Dissipation
P
@ +25°C
Storage Temperature T
Junction Temperature T
CES
EBO
C
TOT
stg
j
80 V
3.0 V
17 A
750 W
-65 to +200 °C
200 °C
Outline Drawing
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
1
Narrowband Test Fixture Impedance
F (MHz)
1090 2.5 - j1.5 1.1 + j0.9
TEST FIXTURE
IN PU T
CIRCUIT
0
Ω
Z
F
(Ω)Z
Z
IF
TEST FIXTURE
OUTPUT
CIRCUIT
Z
F
(Ω)
OF
0
Ω
Electrical Specifications at 25°C
Symbol Parameter Test Conditions Min Max Units
BV
I
CES
R
TH(JC)
P
G
η
R
VSWR-T Load Mismatch Tolerance V
VSWR-S Load Mismatch Stability V
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
Collector-Emitter Breakdow n IC=250mA 80 - V
CES
Collector-Emitter Leakage VCE=45 V - 25 mA
Thermal Resistance VCC=45 V, Pin=350 W, f=1090 MHz - 0.2 °C/W
Input Power VCC=45 V, Pin=350 W, f=1090 MHz - 55 W
in
Power Gain VCC=45 V, Pin=350 W, f=1090 MHz 8.0 - dB
P
Collector Efficiency V
Input Return Loss VCC=45 V, Pin=350 W, f=1090 MHz 9 - dB
L
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
=45 V, Pin=350 W, f=1090 MHz 55 - %
CC
=45 V, Pin=350 W, f=1090 MHz - 2:1 -
CC
=45 V, Pin=350 W, f=1090 MHz - 1.5:1 -
CC
V2.00
Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-350L
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
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