M A COM PH0814-40 Datasheet
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-em
I _--
an AMP company
Linear Power Transistor, 40W
850 - 1450 MHz
Features
l NPN Silicon Microwave Power Transistor
l Common Emitter Configuration
l Broadband Class AB Operation
l Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input and Output Impedance Matching
l Hermetic Metal/Ceramic Package
Absolute‘tiaximum Ratinas at 25°C
I Parameter / Symbol ( Rating 1 Units 1
1 Collector-BaseVoltage ( V,,, 1 56
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
junction Temperature
Storage Temperature
Thermal Resistance
V
V
P
T
8
Es
EBO
‘c
TO:
TJ
ST0
JC
3.0
5.6
175
200 “C
-55 to +200
1.0
Electrical Characteristics at 25°C
I Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Input Power
CollectorCurrent
Input Return Loss RL
Saturated Output Power
Load Mismatch Tolerance
Load Mismatch Tolerance
( Symbol 1 Min 1 Max 1 Units 1
BV,,, 56 -
ICES
BV,,, 56 -
BvEBO
h
FE
P
,N
‘c -
P
ST
VSWR-T VSWR-T -
56
I v I
V
v
A
W
“C
“Cl-W
5.0 mA
3.0 15 100 -
5.5 8.8 w
3.75 A
I,=50 mA
V
v,,=2a v
I,=50 mA
V
V I,=1 0 mA
V,,=5.0 V, 1,=0.5 A
V,,=28 V, I,,=12 mA, PO,,=42 W, F=1450 MHz
V,,=28 V, I& 2 mA, PO,?42 W, F=l450 MHz
UNLESS CT-IERVISE NOTED. TCLERANCES ARE
Test Conditions
it
.060’.002 f
(1521.05)
:NCH~:S ZOO5
:M!, LIHETERS T,13MM,
-
Typical Optimum Device Impedances
F(MHz)
850
950
1050
1150
1250
1350
1450
Specifications Subject to Change Without Notice.
z,(n)
2.0 - j3.6
2.4 - j2.5
3.1 - il.8
3.5 - il.9
3.3 - j2.4
2.5 - j2.4
1.7-j1.8
1.4 - j0.5
1.2-jO.l
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