M A COM PH0810-35 Datasheet

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an AMP company

Wireless Bipolar Power Transistor, 35W
850 - 960 MHz

Features

Designed for Linear Amplifier Applications
Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP
Class A: +53dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting

Absolute‘ Maximum Ratings at 25°C

.100*.010

(2.54t.25)

I t

c5.?4)

PH081 o-35

.230

Electrical Characteristics at 25°C

Typical Optimum Device Impedances

F(MHz)

600 1 .O + j3.7 2.1 + j0.9
650 1.3 + j4.0 1.6 + j0.7 900 1.9 + j4.3 1.6+jO.4

960 3.0 + j2.7 1.7 + jO.1

q#4

ZOAim

UNLESS OTHERWISE NOTED, TOLERANCES ARE ,.HILuNETERS tlsnn,

INCHES f.005

- 2 LOA

i.i”Tw

ZIN

Specifications Subject to Change Without Notice.

Wireless Bipolar Power Transistor, 35W

v2.00

Typical Broadband Performance Curves

PH0810-35

GAIN-EFFICIENCY vs FREQUENCY

Po,,=35 W Vcc=24 V I,,=200 mA

l5 6 75

14

11

10 1

* -

850 900 960

FREQUENCY (MHz)

' 25

GAIN vs POWER OUTPUT

F=900 MHz V,,=24 V

OUTPUT POWER vs COLLECTOR VOLTAGE

1,,=200 mA F=900 MHz

P,,r0.75 w _

72 14 16 18 20 22 24 26

COLLECTOR VOLTAGE (V)

C,, vs COLLECTOR VOLTAGE

60 ,

F=l.OMHz

I

24 27 30 33 36 39 42 45 48

P,, Wm)

IMD vs PoUT

Vcc=24 V I,,=200 mA F1=900 MHz F2=900.1 MHz

Claaa A6

24 28 32 36 40 44 48

P&PEP) in dBm

5 10 15 20 25 30

v,, W)

IMD vs P,,

Vcc=20 V lcoz2.5 A F1=900 MHz F2z900.1 MHz

9

6

ii

z

3

0

-15 r

24 26 32 36 40 44 48

Clam A

P&PEP) in dBm

6

B

2

3

0