M A COM PH0104-85 Datasheet

an AMP company

CW Power Transistor, 85W
30 - 400 MHz

Features

l NPN Silicon Power Transistor

l Common Emitter Configuration
l Class AB Broadband Operation
l 85 Watt PEP Output
l Diffused Emitter Ballasting Resistors
l Gold Metallization System

l Proven in Thousands of ARC-182 Airborne Radios

Absolute Maximum Ratings at 25°C

Parameter

I

Collector-Emitter Voltage V,,,
Emitter-Base Voltage V

I Collector Current (Peak) I lc ( IO I A I

Power Dissipation
JunctionTemperature
StorageTemperature T
Thermal Resistance

) Symbol 1 Rating

65 V

ES0

PO
TJ

ST0

4.0 V

194 w

200

-40 to +125

I 8.K I 0.9

( Units 1

“C
“C

I “WJv I

COATING -,

PHOI 04-85

.a20 c’

:23.83)

v2.00

Electrical Characteristics at 25°C

I Parameter

( Collector-Emitter Breakdown Voltage 1 BV,,,

I Base-Emitter Breakdown Voltage

Collector-Emitter Leakage Current
DC Forward Current Gain

1 Input Power

Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance

( Symbol 1 Min 1 pax 1 Units I

1 BVm

‘CES

h

cc

I PIN I - I

GP

%

RL

I VBWH-T I - I 3:l I - ) V,,=27V, 1,,=5omA, ~~~85 w, F=~OOMHZ

LlNLiSS 3TH;RWISi NJTEII, TOLERANCES ARE (MILLIPIETERS +,,3nH)

lest Conditions

I 65 I
I 4.0 I

20

7.3 ­45 -

9 - dB !I,,=27 V, I,,=50 mA, P,~85 W, F=400 MHz

- 1 v I I,=10 mA, v,,=o.o v
) v I I,=IO mA, I,=O.O A

4

mA

v,,=30 v

80 -

16 ) W

V-,=5.0 V, 1,=2.0 A

) V,,=27 V, I,,=50 mA, Pod85 W, F=400 MHZ

V,,=27 V, I,,=50 mA, PO,,,=85 W. F=400 MHz

dB

% V,,=27 V, I,,=50 mA, Pob,=85 W, F=400 MHz

I

I
I

I

Specifications Subject to Change Without Notice.