M A COM PH0104-16 Datasheet
an AMP company
CW Power Transistor, 16W
30 - 400 MHz PHOI 04-I 6
Features
NPN Silicon Power Transistor
Common Emitter Configuration
Class AB Broadband Operation
16 Watt PEP Output
Diffused Emitter Ballasting Resistors
Gold Metallization System
Prqqn in Thousands of ARC-182 Airborne Radios
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage VCES
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation
1 JunctionTemperature 1 T, \ 200
Storage Temperature
Thermal Resistance
Symbol
V
ES0
‘c
P*
T
s-r0
e
JC
Rating
65
4.0
2 A
63
-4oto+125
2.1 “Cl-W
Units
V
V
W
I “C I
“C
UNLfSS 37HERWISE NOT3 TOLERANXS ARE (F(ILLI~ETERS =,13Hr)
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage BV,,, 65 Base-Emitter Breakdown Voltage BVEoO 4.0 V 1,=2.5 mA, I,=O.O A
Collector-Emitter Leakaoe Current I
DC Forward Current Gain
Input Power
Power Gain
_ Coilector Efficiency
Input Return Loss
Load Mismatch Tolerance
Symbol Min
A-c
h
FE
PIN ’ GP
?C
RL 9 - dB
VSWR-T - ’
9.0 - dB
Max Units
V
I,=5 mA, V,,=O.O V
1
mA v-,=30 v
20 Bo - V,,=5.0 V. I,=500 mA
2.0 w
40 - %
3:l -
V,,=27 V, I,,=10 mA, PO,=16 W, F=400 MHz
V,,=27 V, I,,=1 0 mA, POUT=1 6 W, F=400 MHz
V,,=27 V, I,,=1 0 mA, P,,$6 W, F=400 MHz
V,,=27 V, I,=1 0 mA, Poti W, F=400 MHz
V,,=27 V, I,,=10 mA, P,&6 W, F=400 MHz
INCHES S.OOS
lest Conditions
Specifications Subject to Change Without Notice.
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