PA1186 800-960 MHz.
6 Watt 28v. GaAs Ultra Linear Power Amplifier
Features (typical values)
High IP3 ............................................. +56.0 dBm.
Low NF.......................................................2.4 dB.
High Output Power ............................... +38 dBm.
Low Cost
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T ypical Performance
--u-- 0°C --n-- +25°C --∆-- +7 5°C
ssentalFniaG3.0-/+±.Bd
.pmoc.Bd1@tuoP0.830.63.mBd
erugiFesioN4.25.3.Bd
*)WB.zHk03(RPCA0.05-.cBd
)tuptuO/tupnI(RWSV1:2/1:5.11:5.2/1:2
**)enotowt(3PI0.65+0.05+.mBd
***deriuqeRylppuS0001/82+0021/82+.Am/.v
* ±850kHz from fc at power level of 30dBm. (IS-95)
** IP3 measured with 2 tones @+25dBm. per tone @ 1MHz apart
*** A 10 micro farad capacitor is required from pin 3 (+V) to ground
Min and max values from 0 to 85 degrees C
Outline Drawings
See Attached Document
G a in (d B) vs . F re q u e n c y
32
30
28
26
800 850 960
NF (dB) vs. Frequen cy
3
2.5
2
1.5
800 900 960
Pout (dBm) vs. Frequency
40
39
38
37
36
800 880 960
VSW R vs. Frequency
In Out
2.5
2
1.5
1
800 880 960
Maximum Ratings
Storage T emperature .......-40°C to +125°C
DC Voltage .................................. +30 volts
RF Input Power .......................... +15 dBm.
Case Temperature ........................... +90°C
Rev: 033001
Specifications subject to change without notice
IP3 (dBm) vs. Frequency
56
55
54
53
800 880 960
Freque ncy in M H z.
100 Emlen W ay Telford, Pa. 18969
T el. (215) 723-6011 Fax. (215) 723-6015