PA1182 2300-2400 MHz.
5 Watt 28v. GaAs Ultra Linear Power
Amplifier
Features (typical values)
High IP3 ............................................. +51.0 dBm.
Low NF.......................................................3.0 dB.
High Output Power ............................ +37.5 dBm.
Low Cost
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lacipyT
eulaV
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eulaV
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eulaV
ycneuqerF00320042.zHM
niaG0.320.02.Bd
ssentalFniaG3.0-/+.Bd
.pmoc.Bd1@tuoP5.730.63.mBd
erugiFesioN0.30.4.Bd
*)WB.zHk03(RPCA0.74-.cBd
)tuptuO/tupnI(RWSV1:2/1:5.11:3/1:2
**)enotowt(3PI0.15+0.74+.mBd
***deriuqeRylppuS0001/82+0021/82+.Am/.v
* ± 850kHz from fc at power level of 30dBm. (IS-95)
** IP3 measured with 2 tones @+24dBm. per tone @ 1MHz apart
*** A 10 micro farad capacitor is required from pin3 (+V) to ground
Min and max values from 0 to 85 degrees C
stinU
T ypical Performance @+ 25°C
G a in (d B) vs . F r eq u e n c y
22.8
22.7
22.6
22.5
2300 2325 2350 2400
NF (dB) vs. Frequency
3
2.5
2
2300 2325 2350 2400
Pout (dB m ) vs. Frequency
38
Outline Drawings
See Attached Document
Maximum Ratings
Storage T emperature .......-40°C to +125°C
DC Voltage .................................. +30 volts
RF Input Power .......................... +15 dBm.
Case Temperature ........................... +90°C
Rev 040201
Specifications subject to change without notice
37
2300 232 5 2350 2400
VSW R vs. Frequency
In Out
2.5
2
1.5
1
2300 2350 2400
IP3 (dBm ) vs. Frequ ency
53
52
51
2300 2325 2350 2400
Frequency in MH z.
100 Emlen W ay Telford, Pa. 18969
T el. (215) 723-6011 Fax. (215) 723-6015