M A COM MRF428 Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF Line

NPN Silicon
RF Power Transistor

Designed primarily for high-voltage applications as a high-power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

• Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 DB
Efficiency = 45%

• Intermodulation Distortion @ 150 W (PEP) —
IMD = -32 db (Max)

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

@ 150 W CW

MAXIMUM RATINGS

Rating Symbol Value Unit

Order this document

by MRF428/D

MRF428

150 W (PEP), 30 MHz

RF POWER
TRANSISTOR
NPN SILICON

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current — Continuous IC 20 Adc
Withstand Current — 10 s — 30 Adc
Total Device Dissipation @ TC = 25 °C

Derate above 25 °C
Storage Temperature Range T

55 Vdc

CEO

110 Vdc

CBO

4.0 Vdc

EBO

PD 320

-65 to +150 °C

stg

1.83

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25 °C unless otherwise noted.)

C

R

θJC

0.5 °C/W

OFF CHARACTERISTICS

V

Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)

Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)

55 — — Vdc

(BR)CEO

V

110 — — Vdc

(BR)CES

Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0)

Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

1

V

110 — — Vdc

(BR)CBO

V

4.0 — — Vdc

(BR)EBO

(continued)

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

= 25 °C unless otherwise noted.)

C

DC Current Gain

hFE 10 30 — —

(IC = 5.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)

COB — 220 250 pF

FUNCTIONAL TESTS

Common-Emitter Amplifier Gain
(VCC = 50 Vdc, P
f = 30 MHz)

= 150 W (PEP), IC(max) = 3.32 Adc,

OUT

Output Power
(VCE = 50 Vdc, f = 30 MHz)

Collector Efficiency
(VCC = 50 Vdc, P
f = 30 MHz)

= 150 W (PEP), IC(max) = 3.32 Adc,

OUT

Intermodulation Distortion (1)
(VCE = 50 Vdc, P

= 150 W (PEP), IC = 3.32 Adc)

OUT

Electrical Ruggedness
(VCC = 50 Vdc, P
VSWR 30:1 at all Phase Angles)

= 150 W (PEP), IC(max) = 3.32 Adc,

OUT

NOTE:

1. To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.

GPE 13 15 — dB

P

150 — — W (PEP)

OUT

η

IMD — -33 -30 dB

Ψ

45 — — %

No Degradation in Output Power

C1,C2,C7 — 170-780 pF, Arco 469
C3,C8,C9 — 0.1µF, 100 V Erie
C4 — 500 µF @ 6.0 V
C5 — 9.0-180 pF, Arco 463
C6 — 80-480 pF, Arco 466
C10 — 30 µF, 100 V
R1 — 10 Ω, 10 Watt

R2 — 10 Ω, 1.0 Watt
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16” I.D., 5/16” Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4” I.D.
L4 — 5 Turns, 1/8” Copper Tubing, 9/16” I.D., 3/4” Long
L5 — 10 Ferrite Beads — Ferroxcube #56-590-65/3B

Figure 1. 30 MHz Test Circuit Schematic

2