M A COM MRF275L Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power

Field-Effect Transistor

N–Channel Enhancement–Mode

Designed for broadband commercial and military applications using single
ended circuits at frequencies to 500 MHz. The high power, high gain and
broadband performance of this device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.

• Guaranteed Performance @ 500 MHz, 28 Vdc

Output Power — 100 Watts
Power Gain — 8.8 dB Typ
Efficiency — 55% Typ

• 100% Ruggedness Tested At Rated Output Power

• Low Thermal Resistance

• Low C

— 17 pF Typ @ VDS = 28 Volts

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G

D

S

Order this document

by MRF275L/D

MRF275L

100 W, 28 V, 500 MHz

N–CHANNEL

BROADBAND

RF POWER FET

CASE 333–04, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)
Gate–Body Leakage Current

(VGS = 20 V, VDS = 0)

V

(BR)DSS

I

DSS

I

GSS

DSS

GS

D

P

D

stg

J

θJC

65 — — Vdc

— — 2.5 mAdc

— — 1.0 µAdc

65 Vdc

±20 Vdc

13 Adc

270

1.54

–65 to +150 °C

200 °C

0.65 °C/W

Watts

W/°C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

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ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A) V
Forward Transconductance (VDS = 10 V, ID = 2.5 A) g

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

FUNCTIONAL CHARACTERISTICS

Common Source Power Gain

(VDD = 28 Vdc, P
Drain Efficiency

(VDD = 28 Vdc, P
Electrical Ruggedness

(VDD = 28 Vdc, P

VSWR 10:1 at all Phase Angles)

= 100 W, f = 500 MHz, IDQ = 100 mA)

out

= 100 W, f = 500 MHz, IDQ = 100 mA)

out

= 100 W, f = 500 MHz, IDQ = 100 mA,

out

GS(th)

DS(on)

fs

iss

oss

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G

ps

η 50 55 — %

ψ

1.5 2.5 4.5 Vdc

0.5 0.9 1.5 Vdc

3.0 3.75 — mhos

— 135 — pF
— 140 — pF
— 17 — pF

7.5 8.8 — dB

No Degradation in Output Power

+V

GG

C1

RF

INPUT

C3

C1, C11, C14 0.1 µF, Ceramic Capacitor
C2 240 pF, ATC Type Chip Capacitor
C3, C10 270 pF, ATC Type Chip Capacitor
C4, C6, C8, C9 1–20 pF, Trimmer Capacitor, Johansen
C5 24 pF, Mini–Unelco Type Capacitor
C7 24 pF, Mini–Unelco Type Capacitor
C12, C13 680 pF, Feedthru Capacitors
C15 10 µF, 50 V, Electrolytic Capacitor

R1

Z1

R2

C2

Z2

C6C5C4

DUT

C12 C13

RFC2

C11

RFC1

Z3

C7 C8

RFC1 8 Turns AWG #18, 0.25″I.D., Enameled
RFC2, RFC3 Ferroxcube VK200 19/4B
Z1, 0.250″ x 0.800″, Microstrip Line
Z2, Z3 0.250″ x 0.400″,Microstrip Line
Z4 0.250″ x 1.25″, Microstrip Line

Board Material 0.062″ Glass Teflon,

Z4

C9

2 oz. Copper, Double Clad Copper
Board, εr = 2.55

C10

RFC3

C14

RF

OUTPUT

+

+28 V

C15

REV2

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Figure 1. 500 MHz Test Circuit

TYPICAL CHARACTERISTICS

160
140
120
100

, OUTPUT POWER (WATTS)

out

P

80

60

40

20

0

412

f = 225 MHz

8

10614218

Pin, INPUT POWER (WA TTS)

Figure 2. Output Power versus Input Power

10

VDS = 10 V

9

V

= 2.5 V

GS(th)

8
7
6
5
4
3

, DRAIN CURRENT (AMPS)

D

I

2
1
0

0

VGS, GATE–SOURCE VOLTAGE (VOLTS)

2

315

400 MHz

VDD = 28 V
IDQ = 100 mA

500 MHz

16

4

100

90
80
70
60
50
40
30

, OUTPUT POWER (WATTS)

out

20

P

10

0

20

–10 00

–6 –4

–8

VGS, GATE–SOURCE VOLTAGE (VOLTS)

–2

VDS = 28 V
IDQ = 100 mA
Pin = Constant
f = 500 MHz

42

Figure 3. Output Power versus Gate Voltage

140

0

IDQ = 100 mA
f = 500 MHz

14 1612

18 20 28

VDD, SUPPLY VOLTAGE (VOLTS)

Pin = 13.5 W

10 W

6 W

24

22 26

120

100

80

60

, OUTPUT POWER (WATTS)

40

out

P

20

4.52.50.5 3.51.5

Figure 4. Drain Current versus Gate Voltage

(Transfer Characteristics)

160

80

60

40

20

IDQ = 100 mA
f = 400 MHz

0

14 1612 18 20 282422 26

VDD, SUPPLY VOLTAGE (VOLTS)

140
120
100

, OUTPUT POWER (WATTS)

out

P

Figure 6. Output Power versus Supply Voltage

REV2

3

Pin = 14 W

10 W

6 W

Figure 5. Output Power versus Supply Voltage

160

80
60
40
20

IDQ = 100 mA
f = 225 MHz

0

14 1612 18 20 282422 26

VDD, SUPPLY VOLTAGE (VOLTS)

, OUTPUT POWER (WATTS)

out

P

140
120
100

Figure 7. Output Power versus Supply Voltage

Pin = 8 W

4 W

2 W

TYPICAL CHARACTERISTICS

1000

C

oss

C, CAPACITANCE (pF)

100

10

1

0

515

10

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

C

iss

C

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VGS = 0 V
f = 1.0 MHz

20 1 10025

Figure 8. Capacitance versus Drain–Source V oltage

100

10

, DRAIN CURRENT (AMPS)

D

I

TC = 25°C

30

1

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

10

Figure 9. DC Safe Operating Area

REV2

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