MACOM mrf275l Datasets

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

Designed for broadband commercial and military applica­tions using single ended circuits at frequencies to 500
MHz. The high power, high gain and broadband perform­ance of this device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.

N-Channel enhancement mode

• Guaranteed performance @ 500 MHz, 28 Vdc

Output power — 100 W
Power gain — 8.8 dB typ.
Efficiency — 55% typ.

• 100% ruggedness tested at rated output power

• Low thermal resistance

• Low Crss — 17 pF typ. @ VDS = 28 V

M/A-COM Products

Released - Rev. 07.07

Product Image

CASE 333–04, STYLE 2

1

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

2

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

3

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

4

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

5

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

6

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

7

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

8

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

9

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

10

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

11

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

12

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

13

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

14

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

M/A-COM Products

Released - Rev. 07.07

15

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capaci­tors between the terminals. The metal oxide gate struc­ture determines the capacitors from gate–to–drain (Cgd),
and gate–to–source (Cgs). The PN junction formed dur­ing the fabrication of the MOSFET results in a junction
capacitance from drain–to–source (Cds).

These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances
on datasheets. The relationships between the inter–
terminal capacitances and those given on data sheets
are shown below. The Ciss can be specified in two ways:

1. Drain shorted to source and positive voltage at

the gate.

2. Positive voltage of the drain in respect to source
and zero volts at the gate. In the latter case the
numbers are lower. However, neither method
represents the actual operating conditions in RF
applications.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in
the full–on condition. This on–resistance, VDS(on), oc­curs in the linear region of the output characteristic and is
specified under specific test conditions for gate–source
voltage and drain current. For MOSFETs, VDS(on) has a
positive temperature coefficient and constitutes an impor­tant design consideration at high temperatures, because
it contributes to the power dissipation within the device.

GATE CHARACTERISTICS

The gate of the MOSFET is a polysilicon material, an d
is electrically isolated from the source by a layer of oxide.
The input resistance is very high — on the order of 109
ohms — resulting in a leakage current of a few nanoam­peres. Gate control is achieved by applying a positive
voltage slightly in excess of the gate–to–source threshold
voltage, VGS(th).

Gate Voltage Rating — Never exceed the gate volt­age rating (or any of the maximum ratings on the front
page). Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.

M/A-COM Products

Released - Rev. 07.07

Gate Termination — The gates of this device are
essentially capacitors. Circuits that leave the gate open–
circuited or floating should be avoided. These conditions
can result in turn–on of the devices due to voltage build–
up on the input capacitor due to leakage currents or
pickup.

Gate Protection — These devices do not have an
internalmonolithic zener diode from gate–to–source. If
gate protection is required, an external zener diode is
recommended. Using a resistor to keep the gate–to–
source impedance low also helps damp transients and
serves another important function. Voltage transients on
the drain can be coupled to the gate through the parasitic
gate–drain capacitance. If the gate–to–source imped­ance and the rate of voltage change on the drain are
both high, then the signal coupled to the gate may be
large enough to exceed the gate–threshold voltage and
turn the device on.

HANDLING CONSIDERATIONS

When shipping, the devices should be transported
only in antistatic bags or conductive foam. Upon removal
from the packaging, careful handling procedures should
be adhered to. Those handling the devices should wear
grounding straps and devices not in the antistatic pack­aging should be kept in metal tote bins. MOSFETs
should be handled by the case and not by the leads, and
when testing the device, all leads should make good
electrical contact before voltage is applied. As a final
note, when placing the FET into the system it is designed
for, soldering should be done with grounded equipment.

DESIGN CONSIDERATIONS

The MRF275L is a RF power N–channel enhance­ment mode field–effect transistor (FETs) designed for
HF, VHF and UHF power amplifier applications. M/A­COM RF MOSFETs feature a vertical structure with a
planar design. M/A-COM Application Note AN211A,
FETs in Theory and Practice, is suggested reading for
those not familiar with the construction and characteris­tics of FETs. The major advantages of RF power FETs
include high gain, low noise, simple bias systems, rela­tive immunity from thermal runaway, and the ability to
withstand severely mismatched loads without suffering
damage. Power output can be varied over a wide range
with a low power dc control signal.

DC BIAS

The MRF275L is an enhancement mode FET and,
therefore, does not conduct when drain voltage is ap­plied. Drain current flows when a positive voltage is ap­plied to the gate. RF power FETs require forward bias for

16

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF275L

The RF MOSFET Line
100W, 500MHz, 28V

optimum performance. The value of quiescent drain current
(IDQ) is not critical for many applications. The MRF275L was
characterized at IDQ = 100 mA, each side, which is the sug­gested minimum value of IDQ. For special applications such
as linear amplification, IDQ may have to be selected to opti­mize the critical parameters. The gate is a dc open circuit
and draws no current. Therefore, the gate bias circuit may
be just a simple resistive divider network. Some applications

M/A-COM Products

Released - Rev. 07.07

may require a more elaborate bias system.

GAIN CONTROL

Power output of the MRF275L may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.

17

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.