M A COM MRF177 Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

Order this document

by MRF177/D

RF Power
Field Effect Transistors

N–Channel Enhancement Mode MOSFET

Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push–pull
configurations. Can be used in manual gain control, ALC and modulation
circuits.

• Typical Performance at 400 MHz, 28 V:

Output Power — 100 W
Gain — 12 dB
Efficiency — 60%

• Low Thermal Resistance

• Low C

— 10 pF Typ @ VDS = 28 Volts

rss

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

• Excellent Thermal Stability; Suited for Class A

Operation

6

5, 8

7

2

1, 4

3

MRF177

100 W, 28 V, 400 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 744A–01, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C (1)

Derate above 25°C
Storage Temperature Range T
Operating Temperature Range T

DSS

DGR

GS

D

P

D

stg

J

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction–to–Case R

(1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.

NOTE — CAUTION
packaging MOS devices should be observed.

— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

θJC

65 Vdc
65 Vdc

±40 Vdc

16 Adc

270

1.54

–65 to +150 °C

200 °C

0.65 °C/W

Watts

W/°C

REV 9

1

ELECTRICAL CHARACTERISTICS (T

Characteristic (1) Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 50 mA)

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 50 mA)

Drain–Source On–Voltage

(VGS = 10 V, ID = 3.0 A)

Forward Transconductance

(VDS = 10 V, ID = 2.0 A)

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

= 25°C unless otherwise noted)

C

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

65 — — Vdc

— — 2.0 mAdc

— — 1.0 µAdc

1.0 3.0 6.0 Vdc

— — 1.4 Vdc

1.8 2.2 — mhos

— 100 — pF

— 105 — pF

— 10 — pF

FUNCTIONAL CHARACTERISTICS (Figure 8) (2)

Common Source Power Gain

(VDD = 28 Vdc, P

Drain Efficiency

(VDD = 28 Vdc, P

Electrical Ruggedness

(VDD = 28 Vdc, P
Load VSWR = 30:1, All Phase Angles At Frequency of Test)

(1) Note each transistor chip measured separately
(2) Both transistor chips operating in push–pull amplifier

= 100 W, f = 400 MHz, IDQ = 200 mA)

out

= 100 W, f = 400 MHz, IDQ = 200 mA)

out

= 100 W, f = 400 MHz, IDQ = 200 mA,

out

G

PS

η 55 60 — %

ψ No Degradation

10 12 — dB

in Output Power

Before & After Test

REV 9

2

TYPICAL CHARACTERISTICS

140

f = 150 MHz

120

100

80

60
40

out

P , OUTPUT POWER (WATTS)

20

0

024 8106

225 MHz

400 MHz

Pin, INPUT POWER (WA TTS)

Figure 1. Output Power versus Input Power

140

120

100

80

60
40

out

P , OUTPUT POWER (WATTS)

20

0

10 12 14 18 20 22 26 2816 24

IDQ = 200 mA
f = 400 MHz

VDD, SUPPLY VOLTAGE (VOLTS)

VDD = 28 V
IDQ = 200 mA

Pin = 10 W

6.3 W

4 W

50

40

30

20

10

out

P , OUTPUT POWER (WATTS)

0

02 68104

f = 225 MHz

400 MHz

VDD = 13.5 V
IDQ = 200 mA

Pin, INPUT POWER (WA TTS)

Figure 2. Output Power versus Input Power

100

f = 400 MHz VDS = 28 V

90

Pin = CONSTANT IDQ = 200 mA

80
70
60
50
40
30
20

out

P , OUTPUT POWER (WATTS)

10

30

0

–5 –4 –3 –1 0 1 3 5–2 2 4

VGS, GATE–SOURCE VOLT AGE (VOLTS)

REV 9

3

Figure 3. Output Power versus Supply Voltage

420

360

300

240

180

, CAPACITANCE (pF)

120

oss

C

60

0

04812162024

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

C

rss

C

iss

VGS = 0 V
f = 1 MHz

C

oss

Figure 5. Capacitance versus Drain V oltage

28

140

120

100

80

60

40

20

0

, CAPACITANCE (pF)

iss

, C

rss

C

Figure 4. Output Power versus Gate Voltage

100

20
10

4
2
1

D

I , DRAIN CURRENT (AMPS)

0.4

0.2

0.1
124 106 20 40 10060

TC = 25° C

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 6. DC Safe Operating Area