M A COM MRF174 Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistor

N–Channel Enhancement–Mode

Designed primarily for wideband large–signal output and driver stages up to
200 MHz frequency range.

• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 125 Watts
Minimum Gain = 9.0 dB
Efficiency = 50% (Min)

• Excellent Thermal Stability , Ideally Suited For Class A

Operation

• Facilitates Manual Gain Control, ALC and Modulation

Techniques

• 100% Tested For Load Mismatch At All Phase Angles

With 30:1 VSWR

• Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz

D

Order this document

by MRF174/D

MRF174

125 W, to 200 MHz
N–CHANNEL MOS

BROADBAND RF POWER

FET

G

S

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage

(RGS = 1.0 MΩ)
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

V

DSS

DGR

GS

D

P

D

stg

J

65 Vdc
65 Vdc

±40 Vdc

13 Adc

270

1.54

–65 to +150 °C

200 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.65 °C/W

REV 7

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) I
Gate–Source Leakage Current (VGS = 20 V, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Forward Transconductance (VDS = 10 V, ID = 3.0 A) g

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

FUNCTIONAL CHARACTERISTICS (Figure 1)

Noise Figure

(VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz)

Common Source Power Gain

(VDD = 28 Vdc, P

Drain Efficiency

(VDD = 28 Vdc, P

Electrical Ruggedness

(VDD = 28 Vdc, P
VSWR 30:1 at all Phase Angles)

= 125 W, f = 150 MHz, IDQ = 100 mA)

out

= 125 W, f = 150 MHz, IDQ = 100 mA)

out

= 125 W, f = 150 MHz, IDQ = 100 mA,

out

(BR)DSS

DSS
GSS

GS(th)

fs

iss

oss

rss

NF — 3.0 — dB

G

ps

η 50 60 — %

ψ

65 — — Vdc
— — 10 mAdc
— — 1.0 µAdc

1.0 3.0 6.0 Vdc

1.75 2.5 — mhos

— 175 — pF
— 190 — pF
— 40 — pF

9.0 11.8 — dB

No Degradation in Output Power

ADJUST

RF INPUT

BIAS

R2

+

C9 C10

C3

C2

C1 — 15 pF Unelco
C2 — Arco 462, 5.0–80 pF
C3 — 100 pF Unelco
C4 — 25 pF Unelco
C6 — 40 pF Unelco
C7 — Arco 461, 2.7–30 pF
C5, C8 — Arco 463, 9.0–180 pF
C9, C11, C14 — 0.1 µF Erie Redcap
C10 — 50 µF, 50 V
C12, C13 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener

D1R3

–

L1 L2

C4

R4

C5

L4

C12

R1

C11

RFC1

L3

DUTC1

L1 — #16 AWG, 1–1/4 Turns, 0.213 ″ ID
L2 — #16 AWG, Hairpin 0.25″

L3 — #14 AWG, Hairpin
L4 — 10 Turns #16 AWG Enameled Wire on R1

RFC1 — 18 Turns #16 AWG Enameled Wire, 0.3″ ID
R1 — 10 Ω, 2.0 W
R2 — 1.8 kΩ, 1/2 W
R3 — 10 kΩ, 10 Turn Bourns
R4 — 10 kΩ, 1/4 W

C6

C13

C7

0.062″

C8

C14

0.47″

0.2″

+
VDD = 28 V
–

RF OUTPUT

REV 7

2

Figure 1. 150 MHz Test Circuit

140
120

100

, OUTPUT POWER (WATTS)

out

P

, OUTPUT POWER (WATTS)

out

P

80
70

60
50
40
30
20
10

f = 100 MHz

VDD = 13.5 V
IDQ = 100 mA

150 MHz

200 MHz

f = 100 MHz

80

60

40

20

150 MHz

200 MHz

VDD = 28 V
IDQ = 100 mA

0

0

2

4 6 8 10 12 14

Pin, INPUT POWER (WA TTS)

0

0

46810121416

2

Pin, INPUT POWER (WA TTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

160
140
120
100

80
60

, OUTPUT POWER (WATTS)

40

out

P

20

0

12 2814 16 18 20 22 24 26

IDQ = 100 mA
f = 100 MHz

VDD, SUPPLY VOLTAGE (VOLTS)

Pin = 6 W

4 W

2 W

160
140
120
100

, OUTPUT POWER (WATTS)

out

P

IDQ = 100 mA
f = 150 MHz

80
60
40
20

0

12 2814 16 18 20 22 24 26

VDD, SUPPLY VOLTAGE (VOL TS)

Pin = 12 W

8 W

4 W

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

160
140
120
100

, OUTPUT POWER (WATTS)

out

P

80
60
40
20

IDQ = 100 mA
f = 200 MHz

0

12 2814 16 18 20 22 24 26

VDD, SUPPLY VOLTAGE (VOL TS)

Figure 6. Output Power versus Supply Voltage Figure 7. Power Gain versus Frequency

REV 7

3

Pin = 16 W

12 W

8 W

22
20
18
16
14
12
10

, POWER GAIN (dB)

8

PS

G

6
4
2

20

40 60 80 100 120 140 160 180 200 220

P

out

VDD = 28 V
IDQ = 100 mA

f, FREQUENCY (MHz)

= 125 W