M A COM MRF171A Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode MOSFET

Designed primarily for wideband large–signal output and driver stages from
30–200 MHz.

• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)

• Excellent Thermal Stability , Ideally Suited for Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR

• Low Crss – 8 pF @ VDS = 28 V

• Gold Top Metal

Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment

• Typical Performance at 30 MHz, 28 Vdc
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) –32 dB (Typ)

G

D

S

Order this document

by MRF171A/D

MRF171A

45 W, 150 MHz

MOSFET BROADBAND

RF POWER FET

CASE 211–07, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Gate Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(ID = 50 mA, VGS = 0)
Zero Gate Voltage Drain Current

(VGS = 0, VDS = 28 V)
Gate–Source Leakage Current

(VGS = 20 V, VDS = 0)

V

(BR)DSS

I

DSS

I

GSS

DSS

DGR

GS

D

P

D

stg

J

θJC

65 80 — Vdc

— — 1.0 mAdc

— — 1.0 µAdc

65 Vdc
65 Vdc

±20 Adc

4.5 Adc

115

0.66

–65 to +150 °C

200 °C

1.52 °C/W

Watts

W/°C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 2

1

ELECTRICAL CHARACTERISTICS – continued (T

Characteristic

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 50 mA)

Drain–Source On–Voltage

(VGS = 10 V, ID = 3 A)

Forward Transconductance

(VDS = 10 V, ID = 2 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Common Source Power Gain

(VDD = 28 V, P

Drain Efficiency

(VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA)

Electrical Ruggedness

(VDD = 28 V, P
VSWR 30:1 at All Phase Angles)

= 45 W, f = 150 MHz, IDQ = 25 mA)

out

= 45 W, f = 150 MHz, IDQ = 25 mA,

out

TYPICAL FUNCTIONAL TESTS (SSB)

Common Source Power Gain

(VDD = 28 V, P
f = 30; 30.001 MHz)

Drain Efficiency

(VDD = 28 V, P
f = 30; 30.001 MHz)

Intermodulation Distortion

(VDD = 28 V, P
f = 30; 30.001 MHz)

= 30 W (PEP), IDQ = 100 mA,

out

= 30 W (PEP), IDQ = 100 mA,

out

= 30 W (PEP), IDQ = 100 mA,

out

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

V

GS(th)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η 60 70 — %

G

ps

η — 50 — %

IMD(d3)

1.5 2.5 4.5 Vdc

— 1.0 — V

1.4 1.8 — mhos

— 60 — pF

— 70 — pF

— 8 — pF

17 19.5 — dB

No Degradation in Output Power

— 20 — dB

— –32 — dB

REV 2

2

RF

INPUT

BIAS

+ +

Z1 Z2 Z3 Z4

C3

C2

C1

R2

R3

L1

C4

C5

C6 C13

L2

R1

RFC2

Z5

DUT

RFC1

C14

C11

L3

C7

Z6 L4 Z7

C8

C12

C9

VDD 28 Vdc

+

V

DC

–

RF

OUTPUT

C10

C1, C10 1000 pF, Chip Capacitor
C2, C5, C8 2–20 pF, Trimmer Capacitors, Johanson
C3 43 pF, 100 mil Chip Capacitor, ATC
C4 120 pF, 100 mil Chip Capacitor, ATC
C6, C14 0.1 µF, Capacitors
C7 50 pF, 100 mil Chip Capacitor, ATC
C9 12 pF, 100 mil Chip Capacitor, ATC
C11, C12 680 pF, Feedthru Capacitors
C13 50 µF, 50 V, Electrolytic Capacitor
L1 2 Turns, 0.297″ ID, 18 AWG
L2 1–1/2 Turns, 0.265″ ID, 18 AWG
L3 1–1/4 Turns, 0.234″ ID, 18 AWG
L4 1–1/2 Turns, 0.250″ ID, 18 AWG
R1 68 Ω, 1/2 W Chip Resistor

Figure 1. MRF171A 150 MHz T est Circuit

R2 1 kΩ, 1/2 W Chip Resistor
R3 10 kΩ, 1/2 W Chip Resistor
Z1 0.160″ x 0.400″ Microstrip
Z2 0.160″ x 0.600″ Microstrip
Z3 0.160″ x 0.600″ Microstrip
Z4 0.160″ x 0.900″ Microstrip
Z5 0.160″ x 0.800″ Microstrip
Z6 0.160″ x 0.800″ Microstrip
Z7 0.160″ x 0.400″ Microstrip
RFC1 Ferroxcube VK200–19/4B
RFC2 10 Turns, 0.250″ ID, 20 AWG, Enamel
Board 0.062″, G10 1 oz. Copper Clad

Both Sides, εr = 2.56

REV 2

3

28 V

L2

C8

C9

L1

V

GG

+

C10

+

+

C11

C1 C2

C3

RF

INPUT

T1

C1, C3, C5, C6 0.1 µF, Chip Capacitors
C2, C4 1000 pF, Chip Capacitors
C7 68 pF, Dipped Mica
C8 0.1 µF, Ceramic Cap or Equivalent
C9, C10 680 pF, Feedthru Capacitors
C11 250 µF, 50 V, Electrolytic Capacitor

R3

Figure 2. MRF171A 30 MHz Test Circuit

R1

R2

C4 C5

RF
OUTPUT

C7

DUT

C6

R4

L1, L2 VK200 20/4B Ferrite Choke
R1, R2 200 Ω, 1/2 W Carbon
R3 3 Ω, 1/2 W Carbon
R4 270 Ω, 2 W Carbon
T1 4:1 Impedance Broadband Transformer
T2 1:4 Impedance Broadband Transformer

T2

REV 2

4