M A COM MRF16030 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
• Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 30 Watts
Minimum Gain = 7.5 dB, @ 30 Watts
Minimum Efficiency = 40% @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Order this document
by MRF16030/D
30 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 2
MAXIMUM RATINGS
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector–Current I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
CES
EBO
C
P
D
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2) R
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
θJC
60 Vdc
4.0 Vdc
4.0 Adc
103
0.58
1.7 °C/W
Watts
°C/W
REV 3
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 100 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
Collector–Base Amplifier Power Gain
(VCC = 28 Vdc, P
Collector Efficiency
(VCC = 28 Vdc, P
Input Return Loss
(VCC = 28 Vdc, P
Output Mismatch Stress
VCC = 28 Vdc, P
VSWR = 3:1, All phase angles at frequency of test
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600 MHz, Load
out
= 25°C unless otherwise noted)
C
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
h
FE
G
pe
η
I
RL
Ψ
55 — —
55 — —
4.0
— —
— — 10
20 35 80
7.5 7.7 —
40 45 —
8.0 — —
No Degradation in Output Power
Vdc
Vdc
Vdc
mAdc
—
dB
%
dB
REV 3
2
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