M A COM MRF160 Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

Power Field Effect Transistor

Order this document

by MRF160/D

N–Channel Enhancement–Mode MOSFET

Designed primarily for wideband large–signal output and driver from

30–500 MHz.

• Guaranteed 28 Volt, 500 MHz Performance

Output Power = 4.0 Watts
Gain = 16 dB (Min)
Efficiency = 55% (Typ)

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 100% Tested for Load Mismatch at All Phase Angles with

30:1 VSWR

• Low C

– 0.8 pF Typical at VDS = 28 Volts

rss

D

G

S

MRF160

To 500 MHz, 4 W, 28 V

MOSFET BROADBAND

RF POWER FET

CASE 249–06, STYLE 3

MAXIMUM RATINGS

Drain–Gate Voltage V

Drain–Gate Voltage (RGS = 1.0 MΩ) V

Gate–Source Voltage V

Drain Current–Continuous I

Total Device Dissipation @ TC = 25°C

Derate Above 25°C

Storage Temperature Range T

Operating Junction Temperature T

(TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

DSS

DGR

GS

D

P

D

stg

J

65 Vdc

65 Vdc

± 20 Vdc

1.0 ADC

24

0.14

– 65 to +150 °C

200 °C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case R

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

7.2 °C/W

Watts

W/°C

REV 5

1

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VDS = 0 Vdc, VGS = 0 Vdc, ID = 1.0 mA)

Zero Gate Voltage Drain Current

(VDS = 28 Vdc, VGS = 0 V)

Gate–Source Leakage Current

(VGS = 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 10 mA)

Drain Source On–Voltage

(VDS

Forward Transconductance

(VDS = 10 Vdc, ID = 250 mA)

, VGS = 10 Vdc, ID = 500 mA)

(on)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Common Source Power Gain

(VDD = 28 Vdc, P

Drain Efficiency

(VDD = 28 Vdc, P

Electrical Ruggedness

(VDD = 28 Vdc, P
Load VSWR = 30:1 at All Phase Angles at Frequency of Test

Series Equivalent Input Impedance

(VDD = 28 Vdc, P

Series Equivalent Output Impedance

(VDD = 28 Vdc, P

= 4.0 W, f = 500 MHz, IDQ = 50 mA)

out

= 4.0 W, f = 500 MHz, IDQ = 50 mA)

out

= 4.0 W, f = 500 MHz, IDQ = 50 mA)

out

= 4.0 W, f = 500 MHz, IDQ = 50 mA)

out

= 4.0 W, f = 500 MHz, IDQ = 50 mA)

out

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η

ψ

Z

in

Z

out

65 — —

— — 0.5

— — 1.0

1.5 3.0 4.5

— 3.8 —

150 220 —

— 6.0 —

— 6.5 —

— 0.8 —

16 18 —

50 55 —

No Degradation in Output Power

Ohms

— 6.8 – j21 —

Ohms

— 21 – j28 —

Vdc

mA

µA

Vdc

Vdc

mS

pF

pF

pF

dB

%

REV 5

2

Bias

Supply

RF Input

R3

C1

R2

C2

C7

R1

C8

RFC2

DUT

C10

C9

RFC1

C5

C6

C11

VDD 28 V

+

C12

–

RF Output

+

V

DC

C3

C1, C6 240 pF, 100 mil Chip Capacitors
C2 15 pF, 100 mil ATC Chip Capacitor
C4, C5 1 – 10 pF, Johanson Trimmer Capacitors
C3 24 pF, 100 mil ATC Chip Capacitor
C7, C9 0.1 mF, 100 mil Chip Capacitors
C8 220 pF, 100 mil ATC Chip Capacitor
C10, C11 680 pF, Feed Through Capacitors
C12 50 mF, 50 V Electrolytic Capacitor

C2

1300 mils

C3 & C4
300 mils

C4

Input Line

160 mils X 5315 mils

Figure 1. MRF160 500 MHz Test Circuit

R1 200 Ω, 1/2 Watt
R2 10 kΩ, 1/2 Watt
R3 1 kΩ, 1/2 Watt
RFC1 Ferroxcube VK200–19/4B
RFC2 8 Turns, #20 AWG, Enameled, ID 110 mils

Board Material — 0.062″, Teflon Fiberglass, 1 oz.,
Copper clad both sides, εr = 2.55

C5

900 mils

Output Line

160 mils X 4345 mils

NOTE: Due to variation in Chip Capacitor values and
board material, these are approximate positions.

REV 5

3