M A COM MRF151G Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RFPowerField-EffectTransistor

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.

•Guaranteed Performance at 175 MHz, 50 V:

Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%

•Low Thermal Resistance — 0.35°C/W

•Ruggedness Tested at Rated Output Power

•Nitride Passivated Die for Enhanced Reliability

D

Order this document

by MRF151G/D

MRF151G

300 W, 50 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

G
G

D

(FLANGE)

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V

Drain–Gate Voltage V

Gate–Source Voltage V

Drain Current — Continuous I

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

S

CASE 375–04, STYLE 2

DSS

DGO

GS

D

P

D

stg

J

θ

JC

125 Vdc

125 Vdc
±40 Vdc

40 Adc

500

2.85

–65 to +150 °C

200 °C

0.35 °C/W

Watts

W/°C

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 9

1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS (Each Side)

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

ON CHARACTERISTICS (Each Side)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

DYNAMIC CHARACTERISTICS (Each Side)

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

FUNCTIONAL TESTS

Common Source Amplifier Power Gain

(V

= 50 V, P

DD

Drain Efficiency

(V

= 50 V, P

DD

Load Mismatch

(V

= 50 V, P

DD

VSWR 5:1 at all Phase Angles)

= 300 W, IDQ = 500 mA, f = 175 MHz)

out

= 300 W, f = 175 MHz, ID (Max) = 11 A)

out

= 300 W, IDQ = 500 mA,

out

(BR)DSS

DSS

GSS

GS(th)

DS(on)

fs

iss

oss

rss

G

ps

125 — — Vdc

— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

1.0 3.0 5.0 Vdc

5.0 7.0 — mhos

— 350 — pF
— 220 — pF
— 15 — pF

14 16 — dB

η 50 55 — %

ψ

No Degradation in Output Power

+

BIAS 0–6 V

R1

C5C4

–

R2

C1

INPUT

C1

T1

C6

C2

C3

R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhm, 1/2 W
C1 — Arco 424
C2 — Arco 404
C3, C4, C7, C8, C9 — 1000 pF Chip
C5, C10 — 0.1 µF Chip
C6 — 330 pF Chip
C11 — 0.47 µF Ceramic Chip, Kemet 1215 or

C11 — Equivalent (100 V)

C12 — Arco 422
L1 — 10 Turns AWG #18 Enameled Wire,

L1 — Close Wound, 1/4″ I.D.

L2 — Ferrite Beads of Suitable Material for

L2 — 1.5–2.0 µH Total Inductance

Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or
Equivalent.

Figure 1. 175 MHz Test Circuit

L2

C10C9

L1

D.U.T.

T2

C7 C8

T1 — 9:1 RF Transformer. Can be made of 15–18 Ohms

T1 — Semirigid Co–Ax, 62–90 Mils O.D.

T2 — 1:4 RF Transformer. Can be made of 16–18 Ohms

T2 — Semirigid Co–Ax, 70–90 Mils O.D.

Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, ε

= 5.0

r

NOTE: For stability, the input transformer T1 must be loaded

NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.

See Figure 6 for construction details of T1 and T2.

C11

C12

+

50 V

–

OUTPUT

REV 9

2

TYPICAL CHARACTERISTICS

1000

C

500

200

100

50

C, CAPACITANCE (pF)

20

0

0 1020304050

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

iss

C

oss

C

rss

Figure 2. Capacitance versus

Drain–Source Voltage*

*Data shown applies to each half of MRF151G.

1.04

1.03

1.02

1.01
1

0.99

0.98

0.97

0.96

0.95

0.94

0.93

0.92

, DRAIN-SOURCE VOLTAGE (NORMALIZED)

0.91

GS

0.9

V

–25 0 25 50 75 100

, CASE TEMPERATURE (°C)

T

C

250 mA

ID = 5 A

4 A

2 A

1 A

100 mA

2000

VDS = 30 V

1000

, UNITY GAIN FREQUENCY (MHz)

T

f

0

048121620

2 6 10 14 18

I

, DRAIN CURRENT (AMPS)

D

15 V

Figure 3. Common Source Unity Gain Frequency

versus Drain Current*

100

TC = 25°C

10

, DRAIN CURRENT (AMPS)

D

I

1

2 20 200

, DRAIN–TO–SOURCE VOLTAGE (VOL TS)

V

DS

REV 9

3

Figure 4. Gate–Source V oltage versus

Case T emperature*

HIGH IMPEDANCE

WINDINGS

CENTER

CENTER

TAP

TAP

IMPEDANCE

Figure 6. RF Transformer

4:1

RATIO

Figure 5. DC Safe Operating Area

9:1

IMPEDANCE

RATIO

CONNECTIONS

TO LOW IMPEDANCE

WINDINGS