M A COM MRF151 Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RFPowerField-EffectTransistor

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.

•Guaranteed Performance at 30 MHz, 50 V:

Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%

•Typical Performance at 175 MHz, 50 V:

Output Power — 150 W
Gain — 13 dB

•Low Thermal Resistance

•Ruggedness Tested at Rated Output Power

•Nitride Passivated Die for Enhanced Reliability

D

Order this document

by MRF151/D

MRF151

150 W, 50 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

G

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

CASE 211–11, STYLE 2

S

DSS

DGO

GS

D

P

D

stg

J

θ

JC

125 Vdc
125 Vdc
±40 Vdc

16 Adc

300

1.71

–65 to +150 °C

200 °C

0.6 °C/W

Watts

W/°C

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 9

1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

(BR)DSS

DSS
GSS

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

GS(th)

DS(on)

fs

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

iss

oss

rss

FUNCTIONAL TESTS

Common Source Amplifier Power Gain, f = 30; 30.001 MHz

(V

= 50 V, P

DD

= 150 W (PEP), IDQ = 250 mA) f = 175 MHz

out

Drain Efficiency

(V

= 50 V, P

DD

(Max) = 3.75 A)

I

D

= 150 W (PEP), f = 30; 30.001 MHz,

out

Intermodulation Distortion (1)

(V

= 50 V, P

DD

f2 = 30.001 MHz, I

= 150 W (PEP), f = 30 MHz,

out

= 250 mA)

DQ

Load Mismatch

(V

= 50 V, P

DD

= 250 mA, VSWR 30:1 at all Phase Angles)

I

DQ

= 150 W (PEP), f1 = 30; 30.001 MHz,

out

G

ps

η 40 45 — %

IMD

(d3)

IMD

(d11)

ψ

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(V

= 50 V, P

DD

f2 = 30.001 MHz, I

= 50 W (PEP), f1 = 30 MHz,

out

= 3.0 A)

DQ

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

IMD

IMD

G

PS

(d3)

(d9–13)

125 — — Vdc

— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

1.0 3.0 5.0 Vdc

5.0 7.0 — mhos

— 350 — pF
— 220 — pF
— 15 — pF

18
—

22
13

—

dB

—

dB
—
—

–32
–60

–30

—

No Degradation in Output Power

—
—
—

23
–50
–75

—

dB
—
—

+

BIAS

0–12 V

–

RF

T1

C5

R3

INPUT

C1

C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

Monolythic with Short Leads

C3 — 200 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C4 — 15 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C10 — 10 µF/100 V Electrolytic

REV 9

2

C2

C6 C7 C8

R1

D.U.T.

R2

Figure 1. 30 MHz Test Circuit

L1

L2

+

C9 C10

–

T2

C4

C3

L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel)
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,

e

= 5

r

+

50 V

–

RF
OUTPUT

BIAS

0–12 V

R1

C4 C5

+

RFC2

+50 V

+

C10

L4

C11

RF INPUT

C1

C2 C3

C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 15 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 60 WV Electrolytic
D1 — 1N5347 Zener Diode

L1

R3

R2

D.U.T.

L3

C6

L1 — 3/4″, #18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 1″, #16 AWG into Hairpin
L4 — 2 Turns, #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Choke
RFC2 — VK200–4B
R1 — 150 Ω, 1.0 W Carbon
R2 — 10 kΩ, 1/2 W Carbon
R3 — 120 Ω, 1/2 W Carbon
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, ε

Figure 2. 175 MHz T est Circuit

L2

C7

= 5.0

r

C9

RF OUTPUT

C8

TYPICAL CHARACTERISTICS

1000

C

500

200

100

50

C, CAPACITANCE (pF)

20

0

0 1020304050

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 3. Capacitance versus

Drain–Source Voltage

REV 9

3

iss

C

oss

C

rss

1.04

1.03

1.02

1.01
1

0.99

0.98

0.97

0.96

0.95

0.94

0.93

0.92

, DRAIN-SOURCE VOLTAGE (NORMALIZED)

0.91

GS

V

0.9
–25 0 25 50 75 100

TC, CASE TEMPERATURE (°C)

250 mA

1D = 5 A

4 A

2 A

1 A

100 mA

Figure 4. Gate–Source V oltage versus

Case T emperature