M A COM MRF150 Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RFPowerField-E ffectTransistor

N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to150 MHz

frequency range.

•Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)

•Superior High Order IMD

•IMD

•IMD

•100% Tested For Load Mismatch At All Phase Angles With

(150 W PEP) — –32 dB (Typ)

(d3)

(150 W PEP) — –60 dB (Typ)

(d11)

30:1 VSWR

D

Order this document

by MRF150/D

MRF150

150 W,to150 MHz

N–CHANNEL MOS

LINEAR RF POWER

FET

G

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

CASE 211–11, STYLE 2

S

DSS

DGO

GS

D

P

D

stg

J

θ

JC

125 Vdc
125 Vdc
±40 Vdc

16 Adc

300

1.71

–65 to +150 °C

200 °C

0.6 °C/W

Watts

W/°C

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 9

1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

(BR)DSS

DSS
GSS

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

GS(th)

DS(on)

fs

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

iss

oss

rss

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain f = 30 MHz

(V

= 50 V, P

DD

= 150 W (PEP), IDQ = 250 mA) f = 150 MHz

out

Drain Efficiency

(V

= 50 V, P

DD

(Max) = 3.75 A)

I

D

= 150 W (PEP), f = 30; 30.001 MHz,

out

Intermodulation Distortion (1)

(V

= 50 V, P

DD

f1 = 30 MHz, f2 = 30.001 MHz, I

= 150 W (PEP),

out

= 250 mA)

DQ

Load Mismatch

(V

= 50 V, P

DD

= 250 mA, VSWR 30:1 at all Phase Angles)

I

DQ

= 150 W (PEP), f = 30; 30.001 MHz,

out

G

ps

η — 45 — %

IMD

(d3)

IMD

(d11)

ψ

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(V

= 50 V, P

DD

f2 = 30.001 MHz, I

= 50 W (PEP), f1 = 30 MHz,

out

= 3.0 A)

DQ

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, T wo Tone, Reference Each Tone.

IMD

IMD

G

PS

(d3)

(d9–13)

125 — — Vdc

— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

1.0 3.0 5.0 Vdc

4.0 7.0 — mhos

— 400 — pF
— 240 — pF
— 40 — pF

—
—

17

8.0

—

dB

—

dB
—
—

–32
–60

—
—

No Degradation in Output Power

—
—
—

20
–50
–75

—

dB
—
—

REV 9

2

BIAS

+

0–12 V

–

C5

R1

C2

RF

INPUT

T1

R3

C1

R2

C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

Monolythic with Short Leads

C3 — 200 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C4 — 15 pF Unencapsulated Mica or Dipped Mica

with Short Leads

Figure 1. 30 MHz Test Circuit (Class AB)

L1

C6 C8 C9 C10

C7

L2

+
–

DUT

T2

C4

C3

C10 — 10 µF/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer

+

50 V

–

OUTPUT

RF

25

20

15

10

VDD = 50 V
I

= 250 mA

DQ

= 150 W (PEP)

P

out

POWER GAIN (dB)

5

0

2 5 10 20 20050 100

f, FREQUENCY (MHz)

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

250
200
150

VDD = 50 V

100

50

0

40 V IDQ = 250 mA

1002030

250
200

, OUTPUT POWER (WATTS)

150

out

P

100

50

0

0 12345

VDD = 50 V

40

V

IDQ = 250 mA

Pin, INPUT POWER (WA TTS)

150 MHz30 MHz

6

–30
–35

150 MHz

–40
–45
–50

VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz

–30
–35

30 MHz
–40
–45

IMD, INTERMODULATION DISTORTION (dB)

–50

0 40 60 80 100

20 120 140 160

P

, OUTPUT POWER (WA TTS PEP)

out

Figure 4. IMD versus P

1000

d

3

d

5

800

600

VDS = 30 V

15 V

400

, UNITY GAIN FREQUENCY (MHz)

200

d

3

d

5

out

T

f

0

0 5 10 20

I

, DRAIN CURRENT (AMPS)

D

15

Figure 5. Common Source Unity Gain Frequency

versus Drain Current

10

8

6

REV 9

3

4

, DRAIN CURRENT (AMPS)

2

DS

I

0

24 6 8100

VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 6. Gate Voltage versus

Drain Current

VDS = 10 V
g

= 5 mhos

fs