M A COM MRF148A Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 175 MHz.
• Superior High Order IMD
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
• IMD
• IMD
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
• Lower Reverse Transfer Capacitance (3.0 pF Typical)
(30 W PEP) — –35 dB (Typ)
(d3)
(30 W PEP) — –60 dB (Typ)
(d1 1)
D
Order this document
by MRF148/D
30 W, to 175 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
G
S
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
DSS
DGO
GS
D
P
D
stg
J
120 Vdc
120 Vdc
±40 Vdc
6.0 Adc
115
0.66
–65 to +150 °C
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
θJC
1.52 °C/W
Watts
W/°C
Replaces MRF148/D
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA) V
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I
(BR)DSS
DSS
GSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 2.5 A) V
Forward Transconductance (VDS = 10 V, ID = 2.5 A) g
GS(th)
DS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
iss
oss
rss
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain (30 MHz)
(VDD = 50 V, P
Drain Efficiency (30 W PEP)
(VDD = 50 V, f = 30 MHz, IDQ = 100 mA) (30 W CW)
Intermodulation Distortion
(VDD = 50 V, P
f = 30; 30.001 MHz, IDQ = 100 mA)
Load Mismatch
(VDD = 50 V, P
IDQ = 100 mA, VSWR 30:1 at all Phase Angles)
= 30 W (PEP), IDQ = 100 mA) (175 MHz)
out
= 30 W (PEP),
out
= 30 W (PEP), f = 30; 30.001 MHz,
out
G
η —
IMD
IMD
(d11)
ψ
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, P
f2 = 30.001 MHz, IDQ = 1.0 A)
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
= 10 W (PEP), f1 = 30 MHz,
out
IMD
G
PS
IMD
(d9–13)
fs
ps
(d3)
(d3)
125 — — Vdc
— — 1.0 mAdc
— — 100 nAdc
1.0 2.5 5.0 Vdc
1.0 3.0 5.0 Vdc
0.8 1.2 — mhos
— 62 — pF
— 35 — pF
— 3.0 — pF
—
—
—
—
—
No Degradation in Output Power
—
—
—
18
15
40
50
–35
–60
20
–50
–70
—
—
—
—
—
—
—
—
—
dB
%
dB
dB
BIAS
+
0–10 V
–
RF
INPUT
C1, C2, C3, C4, C5, C6 — 0.1 µF Ceramic Chip or Equivalent
C7 — 10 µF, 100 V Electrolytic
C8 — 100 pF Dipped Mica
L1 — VK200 20/4B Ferrite Choke or Equivalent (3.0 µH)
L2 — Ferrite Bead(s), 2.0 µH
Replaces MRF148/D
2
T1
L1
C1
C8
R3
R1
C2
R2
C4 C5 C6 C7
DUT
T2
C3
R4
Figure 1. 2.0 to 50 MHz Broadband Test Circuit
L2
+
R1, R2 — 200 Ω, 1/2 W Carbon
R3 — 4.7 Ω, 1/2 W Carbon
R4 — 470 Ω, 1.0 W Carbon
T1 — 4:1 Impedance Transformer
T2 — 1:2 Impedance Transformer
+
50 V
–
RF
OUTPUT
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