M A COM MRF141 Datasheet

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RFPowerField-EffectTransistor

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.

•Guaranteed Performance at 30 MHz, 28 V:

Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%

•Typical Performance at 175 MHz, 50 V:

Output Power — 150 W
Gain — 13 dB

•Low Thermal Resistance

•Ruggedness Tested at Rated Output Power

•Nitride Passivated Die for Enhanced Reliability

G

D

S

Order this document

by MRF141/D

MRF141

150 W, 28 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

DSS

DGO

GS

D

P

D

stg

J

65 Vdc
65 Vdc

±40 Vdc

16 Adc

300

1.71

–65 to +150 °C

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θ

JC

0.6 °C/W

Watts

W/°C

REV 9

1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

(BR)DSS

DSS
GSS

ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

GS(th)

DS(on)

fs

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

iss

oss

rss

FUNCTIONAL TESTS

Common Source Amplifier Power Gain, f = 30; 30.001 MHz

(V

= 28 V, P

DD

= 150 W (PEP), IDQ = 250 mA) f = 175 MHz

out

Drain Efficiency

(V

= 28 V, P

DD

= 250 mA, ID (Max) = 5.95 A)

I

DQ

= 150 W (PEP), f = 30; 30.001 MHz,

out

Intermodulation Distortion (1)

(V

= 28 V, P

DD

f2 = 30.001 MHz, I

= 150 W (PEP), f = 30 MHz,

out

= 250 mA)

DQ

Load Mismatch

(V

= 28 V, P

DD

I

= 250 mA, VSWR 30:1 at all Phase Angles)

DQ

= 150 W (PEP), f1 = 30; 30.001 MHz,

out

G

ps

η 40 45 — %

IMD

(d3)

IMD

(d11)

ψ

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(V

= 28 V, P

DD

f2 = 30.001 MHz, I

= 50 W (PEP), f1 = 30 MHz,

out

= 4.0 A)

DQ

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

IMD

IMD

G

PS

(d3)

(d9–13)

65 — — Vdc

— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

0.1 0.9 1.5 Vdc

5.0 7.0 — mhos

— 350 — pF
— 420 — pF
— 35 — pF

16

—

20
10

—

dB

—

dB
—
—

–30
–60

–28

—

No Degradation in Output Power

—
—
—

23
–50
–75

—

dB
—
—

+

BIAS

0–12 V

–C5

C11 R4

R1

C2

RF INPUT

T1

R3

C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica

with Short Leads
C10 — 10 µF/100 V Electrolytic
C11 — 1 µF, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)

Figure 1. 30 MHz Test Circuit (Class AB)

REV 9

2

R2

C6

D.U.T.

C4

C7

L1

C8

L2

C9

+
–

T2

C3

C12

L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,

e

= 5

r

C10

+

28 V

–

RF
OUTPUT

TYPICAL CHARACTERISTICS

100

10

, DRAIN CURRENT (AMPS)

D

I

1

1 100

TC = 25°C

10

, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

V

DS

Figure 2. DC Safe Operating Area Figure 3. Gate–Source Voltage versus

2000

VDS = 20 V

10 V

1.04

1.03

1.02

ID = 5 A

1.01
1

0.99

0.98

4 A

0.97

0.96

0.95

0.94

0.93

0.92

, GATE-SOURCE VOLTAGE (NORMALIZED)

0.91

GS

0.9
–25 100

25 50 750

T

, CASE TEMPERATURE (°C)

C

1 A

0.5 A

0.25 A

Case T emperature

200

0

C

oss

C

iss

2 A

1000

200

C, CAPACITANCE (pF) V

C

, UNITY GAIN FREQUENCY (MHz)

T

f

0

020

26812161814410

I

, DRAIN CURRENT (AMPS)

D

Figure 4. Common Source Unity Gain Frequency

versus Drain Current

30

25

20

0 5 10 15 20 25

V

, DRAIN–SOURCE VOLTAGE (VOL TS)

DS

Figure 5. Capacitance versus

Drain–Source Voltage

300

200

rss

100

20

15

, POWER GAIN (dB)

PS

G

10

5

2010 100 200

VDD = 28 V
I

= 250 mA

DQ

= 150 W

P

out

f, FREQUENCY (MHz) P

0

0 5 10 15 20 25

300

, OUTPUT POWER (WATTS)

200

out

P

100

0

12345

, INPUT POWER (WA TTS)

in

Figure 6. Power Gain versus Frequency Figure 7. Output Power versus Input Power

f = 175 MHz
V

= 28 V

DD

= 250 mA

I

DQ

f = 30 MHz
V

= 28 V

DD

= 250 mA

I

DQ

REV 9

3