M A COM MRF136 Datasheet
Rating
Symbol
Value
Unit
Characteristic
Symbol
Max
Unit
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Designed for wideband large–signal amplifier and oscillator applications up to
400 MHz range, in single ended configuration.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 15 Watts
Narrowband Gain = 16 dB (Typ)
Efficiency = 60% (Typical)
• Small–Signal and Large–Signal
Characterization
• 100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
• Excellent Thermal Stability ,
Ideally Suited For Class A
Operation
• Facilitates Manual Gain
Control, ALC and
Modulation Techniques
G
D
Order this document
by MRF136/D
15 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FET
CASE 211–07, STYLE 2
S
MAXIMUM RATINGS
Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
DSS
DGR
GS
D
P
D
stg
J
65 Vdc
65 Vdc
±40 Vdc
2.5 Adc
55
0.314
–65 to +150 °C
200 °C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case R
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
θJC
3.2 °C/W
Watts
W/°C
REV 7
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 5.0 mA)
Zero–Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
Forward Transconductance
(VDS = 10 V, ID = 250 mA)
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)
Common Source Power Gain (Figure 1)
(VDD = 28 Vdc, P
Drain Efficiency (Figure 1)
(VDD = 28 Vdc, P
Electrical Ruggedness (Figure 1)
(VDD = 28 Vdc, P
VSWR 30:1 at all Phase Angles)
NOTES:
1. Each side measured separately.
= 15 W, f = 150 MHz, IDQ = 25 mA)
out
= 15 W, f = 150 MHz, IDQ = 25 mA)
out
= 15 W, f = 150 MHz, IDQ = 25 mA,
out
= 25°C unless otherwise noted.)
C
V
(BR)DSS
V
65 — — Vdc
I
DSS
I
GSS
GS(th)
g
fs
C
iss
C
oss
C
rss
NF — 1.0 — dB
G
ps
η 50 60 — %
ψ
— — 2.0 mAdc
— — 1.0 µAdc
1.0 3.0 6.0 Vdc
250 400 — mmhos
— 24 — pF
— 27 — pF
— 5.5 — pF
13 16 — dB
No Degradation in Output Power
REV 7
2
BIAS
ADJUST
R3
R2
D1
R4
C7
C8
C10
+
–
RFC1
C9
RFC2
C11
VDD = +28 V
RF INPUT
R1
C1
C1, C2 — Arco 406, 15–115 pF or Equivalent
C3 — Arco 404, 8–60 pF or Equivalent
C4 — 43 pF Mini–Unelco or Equivalent
C5 — 24 pF Mini–Unelco or Equivalent
C6 — 680 pF, 100 Mils Chip
C7 — 0.01 µF Ceramic
C8 — 100 µF, 40 V
C9 — 0.1 µF Ceramic
C10, C11 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1
C2
DUT
Figure 1. 150 MHz T est Circuit
L2
C4
L1 — 2 Turns, 0.29″ ID, #18 AWG, 0.10″ Long
L2 — 2 Turns, 0.23″ ID, #18 AWG, 0.10″ Long
L3 — 2–1/4 Turns, 0.29″ ID, #18 AWG, 0.125″ Long
RFC1 — 20 Turns, 0.30″ ID, #20 AWG Enamel Closewound
RFC2 — Ferroxcube VK–200 — 19/4B
R1 — 27 Ω, 1 W Thin Film
R2 — 10 kΩ, 1/4 W
R3 — 10 Turns, 10 kΩ
R4 — 1.8 kΩ, 1/2 W
Board Material — 0.062″ G10, 1 oz. Cu Clad, Double Sided
L3
C3
C6
RF OUTPUT
C5
REV 7
3
TYPICAL CHARACTERISTICS
2020
18
16
14
12
10
8
6
, OUTPUT POWER (WATTS)
out
4
P
2
0
0 200 600 800 1000
f = 100 MHz
Pin, INPUT POWER (MILLWA TTS)
150 MHz 200 MHz
VDD = 28 V
IDQ = 25 mA
400
10
9
8
7
6
5
4
3
, OUTPUT POWER (WATTS)
out
2
P
1
0
0 200 400 600 800 1000
f = 100 MHz
200 MHz
Pin, INPUT POWER (MILLWA TTS)
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power
20
18
f = 400 MHz
16
IDQ = 25 mA
14
12
10
8
6
, OUTPUT POWER (WATTS)
out
4
P
2
0
01234
P
, INPUT POWER (WATTS)
in
VDD = 28 V
VDD = 13.5 V
24
21
18
15
12
9
, OUTPUT POWER (WATTS)
6
out
P
3
0
12 16 20 24 28
14 18 22 26
VDD, SUPPLY VOLTAGE (VOL TS)
Pin = 600 mW
Figure 4. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage
150 MHz
VDD = 13.5 V
IDQ = 25 mA
400 mW
200 mW
IDQ = 25 mA
f = 100 MHz
24
21
18
15
12
9
, OUTPUT POWER (WATTS)
6
out
P
3
0
12 16 20 24 28
14 18 22 26
VDD, SUPPLY VOLTAGE (VOL TS)
Pin = 900 mW
IDQ = 25 mA
f = 150 MHz
Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage
REV 7
4
600 mW
300 mW
24
21
18
15
12
9
, OUTPUT POWER (WATTS)
6
out
P
3
0
12 16 20 24 28
14 18 22 26
VDD, SUPPLY VOLTAGE (VOL TS)
Pin = 1 W
0.7 W
0.4 W
IDQ = 25 mA
f = 200 MHz
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