M A COM MRF10502 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
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by MRF10502/D
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
500 W (PEAK)
1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Characterized with 10 µs, 1% Duty Cycle Pulses
CASE 355J–02, STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Peak (1) I
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
Storage Temperature Range T
Junction Temperature T
CES
CBO
EBO
C
P
D
stg
J
65 Vdc
65 Vdc
3.5 Vdc
29 Adc
1460
8.3
–65 to +200 °C
200 °C
Watts
W/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) R
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3.Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θ
measured @ 32 µs, 2%.)
θJC
0.12 °C/W
JC
value
Replaces MRF10500/D
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = 60 mAdc, VBE = 0) V
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
Collector Cutoff Current (VCB = 36 Vdc, IE = 0) I
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, P
Collector Efficiency
(VCC = 50 Vdc, P
Load Mismatch
(VCC = 50 Vdc, P
VSWR = 10:1 All Phase Angles)
= 500 W Peak, f = 1090 MHz)
out
= 500 W Peak, f = 1090 MHz)
out
= 500 W Peak, f = 1090 MHz,
out
(BR)CES
(BR)CBO
(BR)EBO
CBO
FE
G
PB
η 40 45 — %
ψ No Degradation in Output Power
65 — — Vdc
65 — — Vdc
3.5 — — Vdc
— — 25 mAdc
20 — — —
8.5 9.0 — dB
RF INPUT
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
.081
Z1 Z2 Z3 Z4
1.309
.150
Z5
.105
1.725
.216
D.U.T.
.625
1.123 2.000
.081
C2 C3 C4
L1
Z6 Z7 Z8 Z9
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
εr = 2.55, 2 Oz. Copper
.700
.644
+
C1
.160
.650
.365
+
–
RF OUTPUT
.355
.081
.100
Replaces MRF10500/D
2
1.108
.500
0.140
Figure 1. T est Circuit
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