Datasheet ML46580S-992 Datasheet (M A COM)

Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992

g

)

ML46580S-992

Preliminary Specifications

High Reliability Semiconductor – Beam Lead
Gallium Arsenide Tunin

Features

•

Constant Gamma of 1.25

•

Strong Beam Construction

•

Low Parasitic Capacitance

•

High Q

•

Close Capacitance Tracking

Description

The ML46580S-992 is a Gallium Arsenide Beam Lead Tuning
Varactor having a Hyperabrupt junction with a resultant constant
gamma characteristic. The constant gamma, high Q values and the
elimination of package parasitics are extremely beneficial for the
linear tuning of voltage controlled oscillators at freq uencies above
20 GHz.

This device has been tested previously for space application in
accordance with the requirements of ESA Generic Specifications
PSS-01-608 and ESA/SCC 5010.

High Reliability Beam Lead diodes can be supplied using the
same procedures established for chip diodes. These procedures
detailed in M/A-COM control document MP3021-001 incorpo­rate the essential elements of ESA/SCC 5010.

M/A-COM can also provide Gallium Arsenide Beam Lead Tun­ing Varactor diodes with a constant gamma of 1.0 and also with
capacitance up to 2pF.

Varactor Diode

Package Outline

BA

CE

∼

CATHODE BEAM

INCHES MILLIMETERS

DIM

A 0.012 0.014 0.305 0.356
B 0.010 — 0.254 —
C 0.006 0.008 0.152 0.203
D 0.004 0.006 0.102 0.152
E 0.007 0.009 0.178 0.229
F — 0.004 0.305 0.1026

Min. Max. Min. Max.

B

D

∼

F
DIE THICKNESS

The Semiconductor Master Catalogue, available on request, con­tains detailed information of the following additional Tuning
Varactor types many of which are suitable for space application.

•

Surface Mount (SOT-23) Tuning Varactors

•

Axial Lead Tuning Varactors

•

Silicon Abrupt and Hyperabrupt Junction Tuning Varactors

•

GaAs Abrupt Junction Tuning Varactors

•

GaAs Hyperabrupt Junction Tuning Varactors with Constant
Gamma 0.75, 1.25, 1.5

Maximum Ratings (Tamb = +25°C

No. Characteristics Symbol Maximum Ratings Units Remarks

1 Power Dissipation P
2 Reverse Voltage V
3 Forward Current I
4 Operating Temperature T
5 Storage Temperature T

Notes:

1. Derate linearly to 0 mW from 25°C to 150°C

2. Derate linearly to 0 mA from 25°C to 150°C

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M/A-COM Division of AMP Incorporated ■ North America: Tel. [phone], Fax [phone] ■ Asia/Pacific: Tel.[phone],
Fax [phone]

AMP and Connecting at a Higher Level are trademarks.

The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.

■

Europe: Tel. [phone], Fax[phone]

O
R

F

OP

STO

25.0 mW See Note 1
18 V
50 mA See Note 2

-65 to +150 °C

-65 to +150 °C

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Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992

Electrical Measurements at Room Temperature d.c. and a.c. Parameters

MIL-STD-750 Test Limits

No. Characteris tics Symbol Test Method Conditions

1Forward Voltage V
2 Reverse Current 1 I
3 Reverse Current 2 I
4 Junction Capacitance C

F1
R1
R2

J 4

4011 IF = 10µA — 1.4 V
4016 VR = -12V — 20 nA
4016 VR = 18V — 10 µA
4001 VR = 4V 0.45 0.55 pF

Min.

F = 1 MHz

5 Quality Factor Q

4

see Note 2 VR = 4.0 v 3000 — —

F = 1 MHz

6 Total Capacitance Ratio C

T2 /C T12

4001 VR = 2.0 v 4.5:1 6.5:1 —

V

= 12 v

R

F = 1 MHz

see Note 3

7Gamma

Notes:

2. Quality Factor is measured on a sample of 10 Beam Lead devices selected at random from the production wafer and assembled in a ceramic
microstrip package. The measurement is carried out at a test frequency above 1 GHz and extrapolated to 50 MHz.

3. Total Capacitance Ratio is measured on the sample of 10 devices used for Q measurement.

4. Measurement/Calculation of Capacitance-Voltage Slope Exponent (Gamma).
The capacitances of a sample of 10 diodes taken at random from the production lot are measured at 2.0, 3.0, 4.0, 6.0, 8.0, 9.0, 10.0, 12.0, volts

reverse bias voltage. Junction capacitance C
then calculated between each pair of adjacent voltages using the following formula:

log10 {Cj

=

γ

log

10

/ Cj

(VR2)

}

(VR1)

{VR2 + 1.3 / VR1 + 1.3}

γ

is calculated by subtracting the package capacitance of the test package. The Gamma values are

J

see Note 4 V

= 2.0V to 1.125 1.375 —

R

V

= 12V

R

Max. Units

Electrical Measurements at High and Low Temperature, -55°C to +125°C

MIL-STD-750 Test Limits

No. Characteristics Symbol Test Me t hod Conditions

1 Reverse Current I

R

4016 V R = 12V — 50 µA

Parameter Drift Values

No. Characteristics Symbol

2 Reverse Current I

3Forward Voltage V

R

F

Change Limits

± 10 nA or ± 100% whichever is the

greater referred to the initial measurement

± 100 mV or ± 100% IF = 10 µA

∆

Min. Max. Units

Test Conditions

VR = 12 Volts

www.macom.com

M/A-COM Division of AMP Incorporated ■ North America: Tel. [phone], Fax [phone] ■ Asia/Pacific: Tel.[phone],
Fax [phone]

AMP and Connecting at a Higher Level are trademarks.

The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.

■

Europe: Tel. [phone], Fax[phone]

V1.00

Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992

g

Conditions for High Temperature Reverse Bias Burn-In

No. Characteristics Symbol Conditions Units

2 Reverse Voltage V

R

14 ± 1 V

3 Ambient Temperature Tamb +50 +0, -5 °C

Conditions for Operating Life Tests

No. Characteristics Symbol Conditions Units

1 Reverse Voltage V

R

14 ± 1 V

2 Ambient Temperature Tamb +150 +0, -5 °C

Electrical Measurements at Intermediate Points and Completion of Endurance Testin

MIL-STD-750 Test Limits

No. Characteristic s Sy mbol Test Method Conditions

I

1Forward Voltage V
2 Reverse Current I
3 Junction Capacitance C

F

R

J 4

4011
4016 VR = 12 Volts 20 nA
4001 VR = 4 Volts

= 10 µA

F

F = 1 MHz

C

=C

J

TOTAL

- C

PACKAGE

Min. Max. Units

1.4 V

pF

0.45 0.55

Electrical Measurements During and on Completion of Radiation Testing

No. Characteristics Symbol

1. Reverse Voltage V

R

MIL-STD-750

Test Method

4016 V R= 12 Volts 20 nA or 200%

Test

Conditions

(only if requeste d)

∆

whichever is greater

www.macom.com

M/A-COM Division of AMP Incorporated ■ North America: Tel. [phone], Fax [phone] ■ Asia/Pacific: Tel.[phone],
Fax [phone]

AMP and Connecting at a Higher Level are trademarks.

The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.

■

Europe: Tel. [phone], Fax[phone]

V1.00

Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992

)

Typical Performance Curves (MA46580 Series

Gamma = 1.0 ± 10% from 2-12 Volts (MA46585 through to MA46589)
Gamma = 1.25 ± 10% from 2-12 Volts (MA46580 through to MA46584)

CAPACITANCE (pF)

REVERSE BIAS VOLTAGE (VOLTS)

CAPACITANCE (pF)

REVERSE BIAS VOLTAGE (VOLTS)

MA46580 – 46584 Capacitance vs Voltage MA46585 – 46589 Capacitance vs Voltage

CAPACITANCE (pF)

CAPACITANCE (pF)

REVERSE BIAS VOLTAGE (VOLTS)

Capacitance RatioC

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REVERSE BIAS VOLTAGE (VOLTS)

T-2 /C TV

M/A-COM Division of AMP Incorporated ■ North America: Tel. [phone], Fax [phone] ■ Asia/Pacific: Tel.[phone],
Fax [phone]

AMP and Connecting at a Higher Level are trademarks.

The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.

for MA46580-46584 Series Capacitance Ratio C

■

Europe: Tel. [phone], Fax[phone]

T-2 /C TV

for MA46585-46589 Series

V1.00