M A COM MASWSS0033TR, MASWSS0033SMB, MASWSS0033 Datasheet
GaAs SP3T 2.5V High Power Switch
Feb 12 2002
DC - 2.5 GHz
Preliminary
MASWSS0033
Features
• Low Harmonic Knee Voltage < 2.5V
• Low Harmonics > 65 dBc at +34 dBm & 1 GHz
• Low Insertion Loss 0.45 dB at 1 GHz
• High Isolation 18.5 dB at 2 GHz
• FQFP 12-lead 3x3mm Low Profile Package
• 0.5 micron GaAs pHEMT Process
Description
M/A-COM’s MASWSS0033 is a GaAs PHEMT MMIC
SP3T high power switch in a low cost miniature FQFP
12-lead 3x3mm thin profile package. This package
represents a lower profile than standard FQFP style,
featuring a 0.8mm maximum thickness.
The MASWSS0033 is ideally suited for applications
where high power, low control voltage, low insertion
loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS
handset systems that connect separate transmit and
receive functions to a common antenna, as well othe
handset and related applications. This part can be
used in all systems operating up to 2.5 GHz requiring
high power at low control voltage.
The MASWSS0033 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process features full passivation for performance and reliability.
Absolute Maximum Ratings 1
Parameter Absolute
Max Input Power (0.5 - 2.5 GHz,
2.5V Control)
Operating Voltage +8.5 volts
Operating Temperature -40 oC to +85 oC
Storage Temperature -65 oC to +150 oC
Maximum
+38 dBm
Functional Schematic
100 pF
ANTRF2
GND
PIN 1
V3
RF3 RF1
100 pF
GND
GND
GND
V2
100 pF
Pin Configuration
PIN
No.
1 V3 Control 3
2 RF3 RF Port 3
3 GND RF Ground
4 GND RF Ground
5 RF2 RF Port 2
6 V2 Control 2
7 GND RF Ground
8 RF1 RF Port 1
9 V1 Control 1
10 GND RF Ground
11 ANT Antenna Port
12 GND RF Ground
13 GND (paddle) RF Ground
PIN Name Description
V1
100 pF
GND
1. Exceeding any one or combination of these limits may
cause permanent damage.
GaAs SP3T 2.5V High Power Switch
Parameter Test Conditions Units Min. Typ. Max.
MASWSS0033
V 1.04
Insertion Loss DC – 1 GHz
Isolation DC – 1 GHz
Return Loss DC – 2.5 GHz dB 20
P1dB Vc = 0V/2.5V dBm 38
2nd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65
3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65
Trise, Tfall 10% to 90% RF, 90% to 10% RF µS 1
Cross Modulation
ANT - CELL
ANT - PCS
Cross Modulation
ANT - CELL
ANT - PCS
Ton, Toff 50% control to 90% RF, and 50% control to 10% RF µS 1
3
3
Two Tone +22 dBm, 1 MHz Spacing, 820 MHz,
Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz,
Two Tones +22 dBm @ 820 & 821 MHz,
One Tone –27 dBm @ 865 MHz
Two Tones +17 dBm @ 1950 & 1951 MHz,
One Tone –27 dBm @ 1870 MHz
1 – 2 GHz
2 - 2.5 GHz
1 – 2 GHz
2 - 2.5 GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
0.5
23
18
15
0.6
0.8
25
18.5
16
59
57
-108
TBD
0.65
0.8
1.0
Transients In Band mV 10
Gate Leakage |Vc| = 2.5V uA 100
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for
0.5 GHz - 2.5 GHz.
3. IP3 slope versus input power is approximately 1.5:1.
Truth Table 4
V1 V2
+2.5 to +5V 0 + 0.2V 0 + 0.2V On Off Off
0 + 0.2V +2.5 to +5V 0 + 0.2V Off On Off
0 + 0.2V 0 + 0.2V +2.5 to +5V Off Off On
4. External DC blocking capacitors are required on all RF ports
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V3 ANT– RF1 ANT - RF2 ANT - RF3
2
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