M A COM MASWSS0020TR, MASWSS0020SMB, MASWSS0020 Datasheet
GaAs SP4T 2.5V High Power Switch
Jan 16 2002
DC - 3 GHz
Preliminary
MASWSS0020
Features
• Low Voltage Operation 2.5V
• Low Harmonics > 65 dBc at +34 dBm & 1 GHz
• Low Insertion Loss 0.6 dB at 1 GHz
• High Isolation 23 dB at 2 GHz
• Miniature FQFP 16-lead 4x4mm Package
• 0.5 micron GaAs pHEMT Process
Description
M/A-COM’s MASWSS0020 is a GaAs PHEMT MMIC
single pole four throw (SP4T) high power switch in a low
cost miniature FQFP 16-lead 4x4mm package. The
MASWSS0020 is ideally suited for applications where high
power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect
separate transmit and receive functions to a common antenna, as well as other handset and related applications.
This part can be used in all systems operating up to 3 GHz
requiring high power at low control voltage.
The MASWSS0020 is fabricated using a 0.5 micron gate
length GaAs PHEMT process. The process features full
passivation for performance and reliability.
Absolute Maximum Ratings 1
Parameter Absolute
Max Input Power (0.5 - 3 GHz,
2.5V Control)
Operating Voltage +8.5 volts
Operating Temperature -40 oC to +85 oC
Storage Temperature -65 oC to +150 oC
1. Exceeding any one or combination of these limits may
cause permanent damage.
Maximum
+38 dBm
Functional Schematic
GND
V2
V4
V3
GND
GND
PIN 16
PIN 1
V1
RF1
39 pF
GND
RF2 RF3
39 pF
ANT
GND
39 pF
Pin Configuration
PIN
No.
1 V1 Control 1
2 RF1 RF Port 1
3 GND RF Ground
4 RF2 RF Port 2
5 GND RF Ground
6 V2 Control 2
7 V3 Control 3
8 GND RF Ground
9 RF3 RF Port 3
10 GND RF Ground
11 GND RF Ground
12 RF4 RF Port 4
13 GND RF Ground
14 V4 Control 4
15 GND RF Ground
16 ANT Antenna Port
17 GND (paddle) RF Ground
PIN Name Description
RF4
39 pF
GND
GND
39 pF
GaAs SP4T 2.5V High Power Switch
Electrical Specifications: TA = 25°C, Z0 = 50Ω 2
Parameter Test Conditions Units Min. Typ. Max.
MASWSS0020
V 1.00
Insertion Loss DC – 1 GHz
Isolation DC – 1 GHz
Return Loss DC – 3 GHz dB 20
IP3 Two Tone +10dBm, 5 MHz Spacing, > 50 MHz
P1dB Vc = 0V/2.5V dBm 38
2nd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65
3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65
Trise, Tfall 50% control to 90% RF, and 50% control to 10% RF
Ton, Toff 50 - 350 MHz uS 1
Transients
Gate Leakage |Vc| = 2.5V uA 100
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for
0.5 GHz - 3 GHz.
1 – 2 GHz
2 - 3 GHz
1 – 2 GHz
2 - 3 GHz
Vc = 0V/2.5V
mV 10
dB
dB
dB
dB
dB
dB
dBm 57
uS
0.6
25
21
1
0.8
1.0
29
23
18.5
0.8
1.0
Truth Table 3
V1 V2
+2.5 to +5V 0 + 0.2V 0 + 0.2V 0 + 0.2V On Off Off Off
0 + 0.2V +2.5 to +5V 0 + 0.2V 0 + 0.2V Off On Off Off
0 + 0.2V 0 + 0.2V +2.5 to +5V 0 + 0.2V Off Off On Off
0 + 0.2V 0 + 0.2V 0 + 0.2V +2.5 to +5V Off Off Off On
3. External DC blocking capacitors are required on all RF ports
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V3 V4 ANT– RF1 ANT - RF2 ANT - RF3 ANT - RF4
2
Loading...