M A COM MASWSS0006SMB, MASWSS0006 Datasheet
GaAs SP2T 2.5V High Power Switch
Jan 17 2002
DC - 3 GHz
Preliminary
MASWSS0006
Features
• Low Voltage Operation 2.5V
• Low Harmonics > 65 dBc at +34 dBm & 1 GHz
• Low Insertion Loss 0.45 dB at 1 GHz
• High Isolation 18.5 dB at 2 GHz
• Miniature SOT-26 Package
• 0.5 micron GaAs pHEMT Process
Description
M/A-COM’s MASWSS0006 is a GaAs PHEMT MMIC
single pole two throw (SP2T) high power switch in a low
cost miniature SOT-26 package. The MASWSS0006 is
ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size
and low cost are required. Typical applications are for
GSM and DCS handset systems that connect separate
transmit and receive functions to a common antenna, as
well as other related handset and general purpose applications. This part can be used in all systems operating
up to 3 GHz requiring high power at low control voltage.
The MASWSS0006 is fabricated using a 0.5 micron gate
length GaAs PHEMT process. The process features full
passivation for performance and reliability.
Absolute Maximum Ratings 1
Parameter Absolute
Max Input Power (0.5 - 3 GHz,
2.5V Control)
Operating Voltage +8.5 volts
Operating Temperature -40 oC to +85 oC
Storage Temperature -65 oC to +150 oC
Maximum
+38 dBm
Functional Schematic
PIN 1
RF1
39 pF
GND
RF2
39 pF
PIN 6
V1
RFC
V2
Pin Configuration
PIN
No.
1 RF1 RF Port 1
2 GND RF Ground
3 RF2 RF Port 2
4 V1 Control 1
5 RFC RF Common Port
6 V2 Control 2
PIN Name Description
39 pF
1. Exceeding any one or combination of these limits may
cause permanent damage.
GaAs SP2T 2.5V High Power Switch
Electrical Specifications: TA = 25°C, Z0 = 50Ω 2
Parameter Test Conditions Units Min. Typ. Max.
MASWSS0006
V 1.00
Insertion Loss DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
Isolation DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
Return Loss DC – 2 GHz
2 - 3 GHz
IP3 Two Tone +21 dBm, 1 MHz Spacing, > 50 MHz
Vc = 0V/3V
P1dB Vc = 0V/2.5V dBm 38
2nd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65
3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65
Trise, Tfall 10% to 90% RF, 90% to 10% RF uS 1
Ton, Toff 50% control to 90% RF, and 50% control to 10% RF uS 1
Transients In Band mV 10
Gate Leakage |Vc| = 2.5V uA 100
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for
0.5 GHz - 3 GHz.
dB
dB
dB
dB
dB
dB
dB
dB
dBm 64
0.45
23
17.5
20
0.55
0.65
24.5
18.5
14
16
0.65
0.75
Truth Table 3
V1 V2
+2.5 to +5V 0 + 0.2V On Off
0 + 0.2V +2.5 to +5V Off On
3. External DC blocking capacitors are required on all RF ports
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
ANT– RF1 ANT - RF2
2
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