M A COM MASW8000 Datasheet

GaAs SPDT Switch
DC - 8 GHz M A S W 8 0 0 0

V 2.00

Features

● Low Insertion Loss, 0.8 dB Typical @ 8 GHz

● Fast Switching Speed, 3 ns Typical

● Flexible Bonding Configurations

Guaranteed Specifications

Frequency Range DC-8.0 GHz
Insertion Loss DC-2.0 GHz 0.8 dB Max

DC-4.0 GHz 0.9 dB Max
DC-8.0 GHz 1.0 dB Max

VSWR DC-2.0 GHz 1.3:1 Max

DC-4.0 GHz 1.4:1 Max
DC-8.0 GHz 1.5:1 Max

Isolation DC-2.0 GHz 37 dB Min

DC-4.0 GHz 30 dB Min
DC-8.0 GHz 20 dB Min

* *

@ + 2 5°C

***

Operating Characteristics

Impedance 50 Ω Nominal
Switching Characteristics

T

rise,Tfall

T

on,Toff

Transients (in-Band) 20 mV Typ

Input Power for 1 dB Compression

Control Voltages (Vdc) 0/-5 0/-8

0.05 GHz +20 dBm +22 dBm Typ

0.5-8 GHz +27 dBm +30 dBm Typ

Intermodulation Intercept point
(for two-tone input power up to +5 dBm)

Intercept Points IP

0.05 GHz +53 dBm +40 dBm Typ

0.5-8 GHz +78 dBm +52 dBm Typ

Control Voltages (Complimentary Logic)

VinLow 0 to -0.2V @ 20 µA Max
VinHi -5V @ 50 µA Typ to -8V @ 350 µA Max

Die Size 0.046” x 0.036” X 0.010”

** All specifications apply with 50 Ω impedance connected to all RF ports,

0 and -5 Vdc control voltages.

*** Loss change 0.0025 dB/°C.(From -55°C to +85°C)

(10/90% or 90/10% RF) 2 ns Typ

(50% CTL to 90/10% RF) 4 ns Typ

2

(1.15mm X 0.90mm X 0.25mm)

IP

3

Typical Performance

Schematic

V 2.00

Handling Precautions

Pe rmanent damage to the MASW8000 may occur if the fo l­l owing precautions are not adhered to:

A . Cleanliness — The MASW8000 should be handled in a

clean env i r o n m e n t .DO NOT attempt to clean unit after
the MASW8000 is installed.

B. Static Sensitivity — All chip handling equipment and per-

sonnel should be DC gr o u n d e d .

C.Transient — Avoid instrument and power supply tra n s i e n t s

while bias is applied to the MASW8000.Use shielded
signal and bias cables to minimize inductive pick - u p.

D. Bias —Apply voltage to either of the complementary con-

trol port A1/B2 or A2/B1 only when the other is gr o u n d e d .
Neither port should be allowed to ”float”.

E .G e n e ral Handling — It is recommended that the

MASW8000 chip be handled along the long side of the
die with a sharp pair of bent twe e ze r s. DO NOT touch the
s u r face of the chip with fingers or twe e ze r s.

Mounting

The MASW8000 is back - m e t a l l i zed with Pd/Ni/Au
(100/1,000/10,000Å) metallization.It can be die-mounted
with AuSn eutectic prefo rms or with thermally conductive
e p ox y. The package surface should be clean and flat befo r e
a t t a c h m e n t .

Eutectic Die Attach:

A . A 80/20 gold/tin prefo rm is recommended with a wo rk

s u r face temperature of approximately 255°C and a tool
t e m p e rature of 265°C.When hot 90/10 nitrogen/hy d r o g e n
gas is applied, tool tip temperature should be approx i­mately 290°C.

B. DO NOT expose the MASW8000 to a tempera t u r e

greater than 320°C for more than 20 seconds. No more
than 30 seconds of scru bbing should be required fo r
a t t a c h m e n t .

E p oxy Die Attach:

A . Apply a minimum amount of epoxy and place the

MASW8000 into position.A thin epoxy fillet should be

v i s i ble around the perimeter of the chip.
B. Cure epoxy per manu fa c t u r e r ’s recommended schedule.
C. E l e c t rically conductive epoxy may be used but is not

r e q u i r e d .

Wire Bonding

A . Ball or wedge bond with 1.0 mil diameter pure gold wire.

T h e rmosonic wirebonding with a nominal stage tempera-

ture of 150°C and a ball bonding force of 40 to 50 gra m s

or wedge bonding force of 18 to 22 grams is recommend-

e d .U l t rasonic energy and time should be adjusted to the

m i n i mum levels to achieve reliable wirebonds.
B. Wirebonds should be started on the chip and term i n a t-

ed on the pack a g e. GND bonds should be as short as

p o s s i bl e ; at least three and no more than four bond

wires or two 3-mil ri bbons from ground pads to pack a g e

are recommended.

Truth Ta bl e * * * *

Control Inputs Condition Of Switch

A1/B2 A2/B1 RF1 RF2

VINHi VINLow On Off

VINLow VINHi Off On

****For normal SPDT operation A1 is connected to B2 and

A2 is connected to B1.

Maximum Ratings

A. Control Voltage (A1/B2 or A2/B1):–8.5 Vdc
B. Max Input RF Power: +34 dBm
C. Storage Temperature: –65°C to +175°C
D. Max Operating Temperature: +175°C

BondPad Dimensions

Inches (mm)

RF: 0.004 x 0.004

(0.100 x 0.100)

RF1, RF2: 0.004 x 0.004

(0.100 x 0.100)

A1, A2, B1, B2: 0.004 x 0.004

(0.100 x 0.100)

PC1, PC2 0.004 x 0.004

(0.100 x 0.100)

GND1, GND2: 0.005 x 0.009

(0.110 x 0.225)

Die Size

Inches (mm)

0.046 x 0.036 x 0.010
(1.15 x 0.90 x 0.25)