M A COM MASW6010G Datasheet

GaAs SPDT Switch
DC-6 GHz M A S W 6 0 1 0 G

V 2.00

■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz

■ Fast Switching Speed, 4ns Typical

■ Ultra Low DC Power Consumption

■ Integral Static Protection

Guaranteed Specifications** @25°C***

Frequency Range DC - 6000

MHz

Insertion Loss

DC - 1.0 GHz 0.6 dB Max
DC - 2.0 GHz 0.8 dB Max
DC - 6.0 GHz 1.4 dB Max

Isolation

DC - 1.0 GHz 45 dB Min
DC - 2.0 GHz 38 dB Min
DC - 6.0 GHz 22 dB Min

VSWR

DC - 1.0 GHz 1.1:1 Max
DC - 2.0 GHz 1.2:1 Max
DC - 6.0 GHz 1.9:1 Max

Operating Characteristics

Impedance 50 Ω Nominal
Switching Characteristics

t

, t

RISE

tON, t
Transients (In-Band) 10 mV Typ

Input Power for 1 dB Compression

Control Voltages (Vdc) 0/-5 0/-8
Above 500 MHz +27 dBm +33 dBm Typ

100 MHz +21 dBm +26 dBm Typ

Intermodulation Intercept Point (for
two-tone input power up to +5 dBm)

Intercept Points IP
Above 500 MHz +68 dBm +46 dBm Typ

100 MHz +62 dBm +40 dBm Typ

Control Voltages (Complementary Logic)

VINLow 0 to -0.2V @ 20 µA Max
VINHi -5V @ 50 µA Typ to -8V @ 300 µA Max

Die Size 0.031" x 0.031" x 0.010"

* Equivalent to Anzac SW200
** All specifications apply with 50 Ω impedance connected to all RF

ports, 0 and -8 Vdc control voltages.

*** Loss change 0.0025 dB/°C. (From -55°C to +85°C)

(10/90% or 90/10% RF) 2 ns Typ

FALL

(50% CTL to 90/10% RF) 4 ns Typ

OFF

2

(0.80mm x0.80mm x 0.25mm)

IP

3

Typical Performance @ +25°C

Insertion Loss

Insertion Loss (dB)

1.4

Loss (dB)

Loss (dB)

VSWR

1.2

1.0

0.8

0.6

0.4

0.2

Isolation @ +25°C

80
70
60
50
40
30
20

MASW6010 NP VSWR

2.0

1.8

1.6

1.4

1.2

1.0

+85°C

+25°C

Frequency GHz

Frequency GHz

Isolation @ +25°C

Frequency GHz

Frequency GHz

VSWR @ +25°C

Frequency GHz

Frequency GHz

-55°C

76543210

76543210

76543210

Schematic

H a n d l i n g ,M o u n t i n g ,Bonding Pro c e d u r e M A S W 6 0 1 0 G

Handling Precautions

Permanent damage to the MASW6010 may occur if the following
precautions are not adhered to:

A. Cleanliness – The MASW6010 should be handled in a clean

e nv i r o n m e n t . DO NOT attempt to clean unit after the
MASW6010 is installed.

B. Static Sensitivity – All chip handling equipment and personnel

should be DC grounded.

C. Transient – Avoid instrument and power supply transients while

bias is applied to the MASW6010.Use shielded signal and bias
cables to minimize inductive pick-up.

D. Bias – Apply voltage to either control port A/B or only when the

other is grounded. Neither port should be allowed to “float”.

E. General Handling – It is recommended that the MASW6010

chip be handled along the long side of the die with a sharp pair
of bent tweezers.DO NOT touch the surface of the chip with fin­gers or tweezers.

Mounting

The MASW6010 is back - m e t a l l i zed with Pd/Ni/Au (100/1,000/ 30,000Å)
metallization.It can be die-mounted with AuSn eutectic preforms or
with thermally conductive epoxy. The package surface should be
clean and flat before attachment.

Eutectic Die Attach:

A. A 80/20 gold/tin preform is recommended with a work surface

temperature of approximately 255°C and a tool temperature of
265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool
tip temperature should be approximately 290°C.

B. DO NOT expose the MASW6010 to a temperature greater than

320°C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.

Epoxy Die Attach:

A. Electrically conductive epoxy must be used.
B. Apply a minimum amount of epoxy and place the MASW6010

into position. A thin epoxy fillet should be visible around the
perimeter of the chip.

C. Cure epoxy per manufacturer's recommended schedule.

Wire Bonding

A. Ball or wedge bond with 1.0 mil diameter pure gold wire.T h e rm o -

sonic wirebonding with a nominal stage temperature of 150°C
and a ball bonding force of 40 to 50 grams or wedge bonding
force of 18 to 22 grams is recommended. U l t rasonic energy and
time should be adjusted to the minimum levels to achieve reliabl e
w i r e b o n d s.

B. Wirebonds should be started on the chip and terminated on the

p a ck a g e.

Bonding Pad Dimensions

Inches (mm)

RFcom: 0.004 x 0.004

(0.100 x 0.100)

RF2,RF3: 0.004 x 0.004

(0.100 x 0.100)

A,B: 0.004 x 0.004

(0.100 x 0.100)

GND1,GND2: 0.012 x 0.004

(0.300 x 0.100)

Die Size

Inches (mm)

0.031 x 0.031 x 0.010
(0.80 x 0.80 x 0.25)

Truth Table

Control Input Condition Of Switch

RFCommon To

Each RF Port

A B RF1 RF2

VinHi VinLow On Off

VinLow VinHi Off On

VinLow 0 to -0.2V
VinHi -5V to -8V

V 2.00

A. Control Voltage (A / B): -8.5 Vdc
B. Max Input RF Power: +42 dBm (500 MHz - 6 GHz)
C. Storage Temperature: -65°C to +175°C
D. Maximum Operating Temperature: +175°C

Maximum Ratings