M A COM MASW4030G Datasheet

GaAs SPDT Switch

Typical Pe r formance @ +25°C***

DC - 4 GHz MASW4030G

V 2.00

Features

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Absorbtive or Reflective

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Excellent Intermodulation Products

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Excellent Temperature Stability

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Fast Switching Speed, 3 ns Typical

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Ultra Low DC Power Consumption

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Independent Bias Control

Guaranteed Specifications* –55˚C to +85˚C

Frequency Range DC – 4.0 GHz
Insertion Loss DC – 1.0 GHz 0.6 dB Max

Isolation DC – 1.0 GHz 60 dB Min

Absorbtive Mode DC – 2.0 GHz 50 dB Min

Reflective Mode DC – 2.0 GHz 42 dB Min

VSWR DC – 1.0 GHz 1.2:1 Max

DC – 2.0 GHz 0.8 dB Max
DC – 4.0 GHz 1.0 dB Max

DC – 4.0 GHz 40 dB Min

DC – 2.0 GHz 1.2:1 Max
DC – 4.0 GHz 1.5:1 Max

Operating Characteristics

Impedance 50 Ω Nominal
Switching Characteristics

tRISE, tFALL (10/90% or 90/10% RF) 3 ns Typ
tON, tOFF (50% CTL to 90/10% RF) 6 ns Typ
Transients (In-Band) 20 mV Typ

Input Power for 1dB Compression**

Control Voltages (Vdc) 0/–5 0/–8

0.05 GHz 24 dBm 25 dBm Typ

0.5 – 4.0 GHz 30 dBm 33 dBm Typ

Intermodulation Intercept Point
(for two-tone input power up to +5 dBm)

Intercept Points IP

0.5 GHz 62 39 dBm Typ

0.5 – 4.0 GHz 68 46 dBm Typ

Control Voltages (Complementary Logic)

VINLow 0 to –0.2 V @ 9 µA Max
VINHi –5 V @ 25 µA Typ to –8 V @ 0.75 µA Max

Die Size 0.043" x 0.041" x 0.010"

*Previously MA4GM202MTC

**All specifications apply with 50 Ω impedance connected to all RF

ports, and –5 Vdc control voltages.

***Loss changes 0.0025 dB/°C

2

(1.08mm x 1.03mm x 0.25mm)

IP

3

H a n d l i n g ,Mounting and Bonding Pro c e d u r e MASW4030G

Maximum Ratings

A. Control Value (A or B): –8.5 Vdc
B. Max Input RF Power: +34 dBm

(500 MHz–4 GHz)
C. Storage Temperature: –65°C to +175°C
D. Max Operating Temperature: +175°C

BondPad Dimensions — Inches (mm)

RF1, RF2 0.005 x 0.008 (0.125 x 0.200)
RFA1, RFB1 0.008 x 0.004 (0.200 x 0.100)
RFA2, RFB2 0.004 x 0.004 (0.100 x 0.100)

A, B, Ac, B

c

0.008 x 0.004 (0.200 x 0.100)

Wire Bonding

A. Ball or wedge with 1.0 mil diameter pure gold wire.

Thermosonic wirebonding with a nominal stage tempera­ture of 150°C and a ball bonding force of 40 to 50 grams
or wedge bonding force of 18 to 22 grams is recommend­ed. Ultrasonic energy and time should be adjusted to the
minimum levels achieve reliable wirebonds.

B. Wirebonds should be started on the chip and terminated

on the package. GND bonds should be as short as possi­ble; at least three and no more than four bond wires from
ground pads to package are recommended.

Schematic

Truth Ta bl e

Handling Precautions

Permanent damage to the MASW4030G may occur if the fol­lowing precautions are not adhered to:
A. Cleanliness — The MASW4030G should be handled in a

clean environment. DO NOT attempt to clean unit after
the MASW4030G is installed.

B. Static Sensitivity — All chip handling equipment and per-

sonnel should be DC grounded.

C. Transient — Avoid instrument and power supply tran-

sients while bias is applied to the MASW4030G. Use
shielded signal and bias cables to minimize inductive
pick-up.

D. Bias — Apply voltage to either of the complementary

control ports only when the other is grounded. No port
should be allowed to “float”.

E. General Handling — It is recommended that the

MASW4030G chip be handled along the long side of the
die with a sharp pair of bent tweezers. DO NOT touch
the surface of the chip with fingers or tweezers.

V 2.00

Mounting

The MASW4030G is back-metallized with
Pd/Ni/Au(100/1,000/10,000Å) metallization. It can be die­mounted with AuSn eutectic preforms or with thermally con­ductive epoxy. The package surface should be clean and flat
before attachment.

Eutectic Die Attach:

A. A 80/20 gold/tin preform is recommended with a work

surface temperature of approximately 255°C and a tool
temperature of 265°C. When hot 90/10 nitrogen/hydrogen
gas is applied, tool tip temperature should be approxi­mately 290°C.

B. DO NOT expose the MASW4030G to a temperature

greater than 320°C for more than 20 seconds. No
more than 3 seconds of scrubbing should be required
for attachment.

Epoxy Die Attach:

A. Apply a minimum amount of epoxy and place the

MASW4030G into position. A thin epoxy fillet should be
visible around the perimeter of the chip.

B. Cure epoxy per manufacturer’s recommended schedule.

C. Electrically conductive epoxy may be used but is not

required.

Condition of Switch

A B T G1 G2 RF1 RF2

Control Inputs Condition of BondPad

Absorbtive VINLOW VINHI GND GND — On Off
SPDT VINHI VINLOW GND GND — Off On
Reflective VINLOW VINHI — GND GND On Off