M A COM MASW2040 Datasheet

GaAs DPDT Switch
DC - 2 GHz M A S W 2 0 4 0

V 2.00

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C a s c a d a b l e

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Low Insertion Loss

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Low DC Power Consumption

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Low Distortion Operation (Quiet Mode)
Useful as a Building Block for

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– Digital Attenuators
– Digital Delay Lines
– Digital Phase Shifters
– Digital Switched Filter Elements

Guaranteed Specifications** -55°C to +85°C

Frequency Range DC – 2.0 GHz
Insertion Loss

DC – 0.5 GHz 0.4 dB Max
DC – 1.0 GHz 0.4 dB Max
DC – 2.0 GHz 0.6 dB Max

VSWR

DC – 0.5 GHz 1.1:1 Max
DC – 1.0 GHz 1.2:1 Max
DC – 2.0 GHz 1.2:1 Max

Isolation

DC – 0.5 GHz 25 dB Min
DC – 1.0 GHz 20 dB Min
DC – 2.0 GHz 15 dB Min

Typical Pe r formance @ +25°C

Operating Characteristics

Impedance 50 Ω Nominal
Switching Characteristics

tRISE, tFALL (10/90% or 90/10% RF) 3 ns Typ
tON, tOFF (50% CTL to 90/10% RF) 6 ns Typ
Transients (In-Band) 20 mV Typ

Input Power for 1dB Compression

Control Voltages (Vdc) 0/–5 0/–8

0.05 GHz +24 dBm +25 dBm Typ

0.5 - 2 GHz +30 dBm +33 dBm Typ

Intermodulation Intercept Point
(for two-tone input power up to +5 dBm)

Intercept Points IP2 IP3

0.05 GHz +62 +39 dBm Typ

0.5 - 2 GHz +68 dBm +46 dBm Typ

Control Voltages (Complementary Logic)

VINLow 0 to –0.2V @ 9 µA Max
VINHi –5V @ 25 µA Typ to –8V @ 75 µA Max

Die Size 0.045" x 0.038" x 0.010"

(1.13mm x 0.97mm x 0.25mm)

**All specifications apply with 50 Ω impedance connected to all RF

ports, 0 and –5 Vdc control voltages.

*** Loss change 0.0025dB/°C (-55°C to +85°C)

S ch e m a t i c

H a n d l i n g ,M o u n t i n g , Bonding Pro c e d u r e M A S W 2 0 4 0

Maximum Ratings

A. Control Value (A or B): –8.5 Vdc
B. Max Input RF Power: +34 dBm

(500 MHz–4 GHz)
C. Storage Temperature: –65°C to +175°C
D. Max Operating Temperature: +175°C

BondPad Dimensions — Inches (mm)

RF1, RF2 0.004 x 0.008 (0.100 x 0.200)
RFA1, RFB1 0.004 x 0.005 (0.100 x 0.125)
RFA2, RFB2 0.004 x 0.005 (0.100 x 0.125)

A, B, Ac, Bc 0.004 x 0.004 (0.100 x 0.100)

Truth Ta bl e

VINLOW= 0.0 TO -0.2V
VINH

I = -0.5V

Die Size — Inches (mm)

0.045 x 0.038 x 0.010 (1.13 x 0.97 x 0.25)

V 2.00

Handling Precautions

Permanent damage to the MASW2040 may occur if the following
precautions are not adhered to:
A. Cleanliness — The MASW2040 should be handled in a clean

environment. DO NOT attempt to clean unit after the
MASW2040 is installed.

B. Static Sensitivity — All chip handling equipment and personnel

should be DC grounded.

C.Transient — Avoid instrument and power supply transients

while bias is applied to the MASW2040.Use shielded signal
and bias cables to minimize inductive pick-up.

D. Bias — Apply voltage to either control port A or B only when

the other is grounded. Neither port should be allowed to
“float”.

E. General Handling — It is recommended that the MASW2040

chip be handled along the long side of the die with a sharp
pair of bent tweezers. DO NOT touch the surface of the chip
with fingers or tweezers.

Mounting

The MASW2040 is back-metallized with Pd/Ni/Au(100/1,000/
10,000Å) metallization. It can be die-mounted with AuSn eutectic
preforms or with thermally conductive epoxy. The package sur­face should be clean and flat before attachment.

Control Inputs Condition of Switch

A B RF1 - RFA1 RF1 - RFB1 RF2 - RFA2 RF2 - RFB2

VINHIVINL

VINL

OW

OW

VINH

OFF ON OFF ON

I ON OFF ON OFF

Eutectic Die Attach:

A. A 80/20 gold/tin preform is recommended with a work surface

temperature of approximately 255°C and a tool temperature of
265°C.When hot 90/10 nitrogen/hydrogen gas is applied, tool
tip temperature should be approximately 290°C.

B. DO NOT expose the MASW2040 to a temperature greater

than 320°C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.

Epoxy Die Attach:

A. Apply a minimum amount of epoxy and place the MASW2040

into position. A thin epoxy fillet should be visible around the

perimeter of the chip.
B. Cure epoxy per manufacturer’s recommended schedule.
C. Electrically conductive epoxy may be used but is not required.

Wire Bonding

A. Ball or wedge with 1.0 mil diameter pure gold wire.

Thermosonic wirebonding with a nominal stage temperature

of 150°C and a ball bonding force of 40 to 50 grams or wedge

bonding force of 18 to 22 grams is recommended. Ultrasonic

energy and time should be adjusted to the minimum levels

achieve reliable wirebonds.
B. Wirebonds should be started on the chip and terminated on

the package. GND bonds should be as short as possible; at
least three and no more than four bond wires from ground