M A COM MASW20000 Datasheet

GaAs SPDT Switch

0 4 8 12 16 20

0 4 8 12 16 20

0 4 8 12 16 20

ISOLATION (dB)

VSWR

FREQUENCY (GHz)

Input

Output

DC - 20 GHz M A S W 2 0 0 0 0

Features

●

Very Broadband Performance

●

Low Insertion Loss, 1.75 dB Typical @ 18 GHz

●

High Isolation, 50 dB Typical @ 18 GHz

●

Fast Switching Time, 2 nS Typical

●

Reflective Configuration

●

Ultra Low DC Power Consumption

●

Via Hole Grounding

Guaranteed Specifications*@ +25°C

Frequency Range DC-20.0 GHz
Insertion Loss DC-10.0 GHz 1.7 dB Max

DC-18.0 GHz 2.1 dB Max
DC-20.0 GHz 2.5 dB Max

VSWR DC-10.0 GHz 1.60:1 Max

DC-18.0 GHz 1.80:1 Max
DC-20.0 GHz 2.00:1 Max

Isolation DC-10.0 GHz 50 dB Min

DC-18.0 GHz 42 dB Min
DC-20.0 GHz 40 dB Min

**

Operating Characteristics

Impedance 50 Ω Nominal
Switching Characteristics

T

rise,Tfall

2 ns Typ

T

on,Toff

Transients (in-Band) 20 mV Typ

Input Power for 1 dB Compression

Control Voltages (Vdc) 0/-5

0.5-20 GHz +25 dBm Typ

0.05 GHz +18 dBm Typ

Intermodulation Intercept point (for two-tone input power up to +5 dBm)

Intercept Points IP

0.5-20 GHz +59 dBm +43 dBm Typ

0.05 GHz +27 dBm Typ

Control Voltages (Complimentary Logic)

VinLow 0 to -0.2 V @ 5 µA Max
VinHi -5 V @50 µA Max

Die Size 0.083”x 0.035”X 0.004”

* Wafer level data.All specifications apply with 50 Ω impedance connected

to all RF ports, 0 and -5 Vdc control voltages.

** Loss change 0.0025 dB/°C. (From -55°C to +85°C)

(10/90% or 90/10% RF)

(50% CTL to 90/10% RF) 3 ns Typ

2

(2.10mm X 0.89mm X 0.10mm)

IP

3

GND

RF GND

GND

RF1

GND

A1 B2 B1 A2

Typical Performance

INSERTION LOSS (dB)

2.0

1.5

1.0

0.5

0.0

80
60
40
20

0

2.0

1.8

1.6

1.4

1.2

1.0

Schematic

V 2.00

GND
RF2

GND

Handling, Mounting and Bonding Procedure MASW20000

Handling Precautions

Permanent damage to the MASW20000 may occur if the follow­ing precautions are not adhered to:

A. Cleanliness — The MASW20000 should be handled in a clean

environment. DO NOT attempt to clean unit after the
MASW20000 is installed.

B. Static Sensitivity — All chip handling equipment and personnel

should be DC grounded.

C.Transient — Avoid instrument and power supply transients

while bias is applied to the MASW20000. Use shielded signal
and bias cables to minimize inductive pick-up.

D. Bias —Apply voltage to either control port A1/B2 or A2/B1

only when the other is grounded. Neither port should be
allowed to ”float”.

E. General Handling — It is recommended that the MASW20000

chip be handled along the long side of the die with a sharp
pair of bent tweezers. DO NOT touch the surface of the chip
with fingers or tweezers.

Mounting

The MASW20000 is back-metallized with Pd/Ni/Au (100/1,000/
30,000Å) metallization. It can be die-mounted with AuSn eutectic
preforms or with thermally conductive epoxy. The package sur­face should be clean and flat before attachment.

Eutectic Die Attach:

A. A 80/20 gold/tin preform is recommended with a work surface

temperature of approximately 255°C and a tool temperature of
265°C.When hot 90/10 nitrogen/hydrogen gas is applied, tool
tip temperature should be approximately 290°C.

B. DO NOT expose the MASW2000 to a temperature greater

than 320°C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.

Epoxy Die Attach:

A. Apply a minimum amount of epoxy and place the

MASW20000 into position. A thin epoxy fillet should be visible

around the perimeter of the chip.
B. Cure epoxy per manufacturer’s recommended schedule.
C. Electrically conductive epoxy may be used but is not required.

Wire Bonding

A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Gold

ribbon (3.0 mil X 0.5 mil) may also be used.Thermosonic wire

bonding with a nominal stage temperature of 150°C and a ball

bonding force of 40 to 50 grams or wedge bonding force of 18

to 22 grams is recommended. Ultrasonic energy and time

should be adjusted to the minimum levels to achieve reliable

wirebonds.
B. Wirebonds should be started on the chip and terminated on

the package.

Maximum Ratings

A. Control Voltage (A1/B2 or A2/B1): –8.5 Vdc
B. Max Input RF Power: +34 dBm
C. Storage Temperature: –65°C to +175°C
D. Max Operating Temperature: +175°C

BondPad Dimensions

Inches (mm)

RF, RF1, RF2: 0.004 x 0.004

(0.100 x 0.100)

A1, A2, B1, B2: 0.004 x 0.004

(0.100 x 0.100)

Truth Ta bl e * * *

Control Inputs Condition Of Switch

A1/B2 A2/B1 RF1 RF2

VINHi VINLow On Off

VINLow VINHi Off On

VinLow 0 to -0.2V
VinHi -5V

***For normal SPDT operation A1 is connected to B2 and A2 is connected to B1.

Die Size

Inches (mm)

0.083 x 0.035 x 0.004
(2.10 x 0.89x 0.10)

V 2.00