M A COM MASW2000 Datasheet

GaAs SPDT Switch

S ch e m a t i c

Typical Pe r formance @ +25°C***

DC - 3 GHz M A S W 2 0 0 0

V 2.00

F e a t u r e s

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Low Insertion Loss, 0.5 dB Typical @ 2 GHz

●

Fast Switching Speed, 22 ns Typical
Reflective/Absorptive Configuration

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Ultra Low DC Power Consumption

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Guaranteed Specifications**(-55°C to +85°C)

Frequency Range DC - 3.0 GHz
Insertion Loss DC–0.5 GHz 0.5 dB Max

VSWR Relective

Absorptive

Isolation DC–0.5 GHz 43 dB Min

◊

Operating Characteristics

Impedance 50 Ω Nominal
Switching Characteristics

t

RISE, tFALL (10/90% or 90/10% RF) 22 ns Typ

t

ON, tOFF (50% CTL to 90/10% RF) 27 ns Typ

Transients (In-Band) 25 mV Typ

Input Power for 1dB Compression

Control Voltages (Vdc) 0/-5 0/-8

0.05 GHz +24 dBm +26 dBm Typ

0.5–3.0 GHz +26 dBm +32 dBm Typ

Intermodulation Intercept Point
(for two-tone input power up to +5 dBm)

Intercept Points IP

0.05 GHz +63 +43 dBm Typ

0.5–3.0 GHz +80 +53 dBm Typ

Control Voltage (Complementary Logic)

VINLow 0 to -0.2 V @ 5 uA Max
VINHi

-5 V @ 60 uA Typ to -8 V @500 uA Max
Die Size 0.056" x 0.056" x 0.010"

DC–1.0 GHz 0.6 dB Max
DC–2.0 GHz 0.8 dB Max
DC–3.0 GHz 1.0 dB Max

DC–0.5 GHz 1.20:1 Max
DC–1.0 GHz 1.20:1 Max
DC–2.0 GHz 1.20:1 Max
DC–3.0 GHz 1.40:1 Max

◊◊

DC–2.0 GHz 1.20:1 Max
DC–3.0 GHz 1.40:1 Max

DC–1.0 GHz 35 dB Min
DC–2.0 GHz 27 dB Min
DC–3.0 GHz 24 dB Min

2

1.40mm x 1.40mm x 0.25mm)

IP

3

** All specifications apply with 50 Ω impedance connected to all RF ports, 0 and 0

and -5 Vdc control voltages.

*** Loss changes 0.0025 dB/°C (From -55°C to +85°C)

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For relective operation RL1/RL2 are unconnected.

◊◊

For absorptive operation RL1 connects to RF1 and RL2 connects to RF2.

Handling, Mounting, Bonding Procedure MASW2000

Truth Ta bl e * * *

Control Inputs Condition Of Switch

A1/B2 A2/B1 RF1 RF2

VINHi VINLow On Off

VINLow VINHi Off On

*** For normal SPDT operation A1 is connected to B2 and A2 is connected to B1.

Maximum Ratings

A.Control Voltage (A1/B2 or A2/B1):-8.5 Vdc
B.Max Input RF Power: +34 dBm
C.Storage Temperature:-65°C to +175°C
D.Maximum Operating Temperature:+175°C

Die Size

Inches (mm)

0.056 x 0.056 x 0.010
(1.40 x 1.40 x 0.25)

V 2.00

Handling Precautions

Permanent damage to the MASW2000 may occur if the following
precautions are not adhered to:

A. Cleanliness — The MASW2000 should be handled in a clean

environment. DO NOT attempt to clean unit after the
MASW2000 is installed.

B. Static Sensitivity — All chip handling equipment and personnel

should be DC grounded.

C.Transient — Avoid instrument and power supply transients

while bias is applied to the MASW2000. Use shielded signal
and bias cables to minimize inductive pick-up.

D. Bias —Apply voltage to either control port A1/B2 or A2/B1

only when the other is grounded. Neither port should be
allowed to ”float”.

E. General Handling — It is recommended that the MASW2000

chip be handled along the long side of the die with a sharp
pair of bent tweezers. DO NOT touch the surface of the chip
with fingers or tweezers.

Mounting

The MASW2000 is back-metallized with Pd/Ni/Au (100/1,000/
10,000Å) metallization. It can be die-mounted with AuSn eutectic
preforms or with thermally conductive epoxy. The package sur­face should be clean and flat before attachment.

Eutectic Die Attach:

A. A 80/20 gold/tin preform is recommended with a work surface

temperature of approximately 255°C and a tool temperature of
265°C.When hot 90/10 nitrogen/hydrogen gas is applied, tool
tip temperature should be approximately 290°C.

B. DO NOT expose the MASW2000 to a temperature greater

than 320°C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.

Epoxy Die Attach:

A. Apply a minimum amount of epoxy and place the MASW2000

into position. A thin epoxy fillet should be visible around the

perimeter of the chip.
B. Cure epoxy per manufacturer’s recommended schedule.
C. Electrically conductive epoxy may be used but is not required.

Wire Bonding

A. Ball or wedge bond with 1.0 mil diameter pure gold wire.

Thermosonic wirebonding with a nominal stage temperature

of 150°C and a ball bonding force of 40 to 50 grams or wedge

bonding force of 18 to 22 grams is recommended. Ultrasonic

energy and time should be adjusted to the minimum levels to

achieve reliable wirebonds.

BondPad Dimensions

Inches (mm)

RF:0.004 x 0.004

(0.100 x 0.100)

RF1, RF2:0.009 x 0.009

(0.225 x 0.225)

A1, A2, B1, B2:0.004 x 0.004

(0.100 x 0.100)

GND1, GND2:0.009 x 0.004

(0.225 x 0.105)

RL1, RL2:0.004 x 0.005

(0.100 x 0.125)

B. Wirebonds should be started on the chip and terminated on

the package. GND bonds should be as short as possible; at

least three and no more than four bond wires from ground
pads to package are recommended.