M A COM MA4E2054-1141T, MA4E2054E-1068T, MA4E2054D-287T, MA4E2054D-1146T, MA4E2054C-287T Datasheet

Surface Mount Low Barrier
X-Band Schottky Diode

MA4E2054 Series

Features

• Low IR (<100nA @ 1V, <500nA @ 3V)

• Designed for High Volume, Low Cost Detector and Mixer

Applications

• Low Noise Figure: 5.7 dB (SSB) at X-Band

• High Detector Sensitivity: -55 dBm TSS

• Low Capacitance: 0.30 pF

• Low 1/F Noise

• Single, Series Pair, and Unconnected Pair Configurations

• Available in four package styles

• Tape and Reel

Description

The MA4E2054 series are low barrier n-type silicon Schottky
diodes assembled in low cost surface mount plastic packages.
They are designed for use as high performance mixer and
detector diodes at frequencies from VHF through low Ku band.

The MA4E2054-1141T (SOD-323), and the MA4E2054A and
the MA4E2054C (available in both the SOT-23 and SOT-323
packages) are single element Schottky diodes characterized for
use as single ended mixers and detectors. The MA4E2054B and
MA4E2054D (available in both the SOT-23 and SOT-323
packages) incorporate two Schottky chips in series pair
configurations. The MA4E2054E-1068T consists of two
Schottky chips in the SOT-143 package in an unconnected pair
configuration. These diodes are useful for balanced mixer and
detector voltage doubler circuits. Applications for the
MA4E2054 series include VSAT and DBS mixers. The small
diode package size and low cost make them attractive for use in
RF tag applications for identification and toll collection.

The part number consists of the base chip (MA4E2054),
followed by the wiring configuration (A, B, C, D, E, omit for
SOD-323), the package style (287, 1068, 1141, 1146) and a “T”
for tape and reel.

The MA4E2054-1141T is available only in the SOD-323
package style. The MA4E2054A , B, C, D are available in both
the SOT-23 and SOT-323 package styles. The MA4E2054E is
available only in the SOT-143 package style.

Package Outlines

SOT-23 (287)

SOT-323 (1146)

Configurations

3

12

SINGLE

MA4E2054A-287T

MA4E2054A-1146T

3

12

SINGLE

MA4E2054C-287T

MA4E2054C-1146T

SOT-143 (1068)

SOD-323 (1141)

TOP VIEW

SERIES PAIR

MA4E2054B-287T

MA4E2054B-1146T

MA4E2054D-287T

MA4E2054D-1146T

3

12

3

12

SERIES PAIR

4

3

Specifications subject to change without notice.

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1

SINGLE

MA4E2054-1141T

2

12

UNCONNECTED PAIR

MA4E2054E-1068T

V 4.0

1

Surface Mount Low Barrier X-Band Schottky Diodes

MA4E2054 Series

Maximum Ratings

Parameter Unit Values

Operating Temperature ºC -65 to +125
Storage Temperature ºC -65 to +125
Incident RF Power (CW) mW 75

1

Reverse Voltage @ 25ºC V 3
Forward Current mA 20
Soldering Temperature ºC +260 for 5 sec.

1. At 25°C junction temperature. Derate linearly to zero watts at 125°C case temperature.

Electrical Specifications @ +25°C

Parameter Condition Symbol Specification

Breakdo wn Voltage IR = 10 mA V
Reverse Leakage Current VR = 1 V I
Reverse Leakage Current VR = 3 V I
Total Capacitance VR = 0 V C

Dynamic Resistance

2

IF = 10 mA R

Forward Voltage IF = 1 mA V
Forward Voltage Difference

1. Applies to MA4E2054B, MA4E2054D and MA4E2054E configurations.
= RS + RJ where RJ =

2. R

D

1

26

(in mA)

I

F

IF = 1 mA

∆V

B

R

R

T

D

F

F

3.0 V min.
100 nA max.
500 nA max.

0.30 pF max.

17 Ohms max.

250 mV min.

20 mV max.

Typical RF Performance @ +25°C

Parameter Conditions Typical Value

Mixer Noise Figure
IF Impedance IF = 30 MHz 200 ohms

Tangential Signal
Sensitivity

2

Detector Output
Voltage at -30 dBm

Detector Output RL = 1M Ohm 20 mV

1. Fixture tuned to 9.375 GHz.

2. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance.

1

f = 9.375 GHz 5.7 dB (SSB)

IF = 20 mA

-55 dBm

BW = 2 MHz

2

RL = 100K Ohms

= 20 µA

I

F

20 mV

Spice Model Parameters

IS = 3 x 10-8 A M = 0.50

RS = 11Ω

N = 1.05 BV = 5.0 V
TT = 0 S IBV = 1 x 10 -5 A

Cj(0) = 0.10 x 10 -12 pF
Cpar = 0.11 x 10 -12 pF

VJ = 0.40 V

EG = 0.69 eV

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacific: Tel.[phone], Fax [phone]
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V 4.0

2

Surface Mount Low Barrier X-Band Schottky Diodes

Circuit Models

MA4E2054 Series

SOT-23

1

.13 pf

2

.13 pf .01 pf

SOT-323

1

.04 pf

2

.04 pf .06 pf

.6 nH

.6 nH

.65 nH

.65 nH

.06 pf

.01 pf

.05 pf

.05 pf

.05 pf

.05 pf

.7 nH

.013 pf .015 pf

.6 nH

.06 pf .04 pf

SOT-143

C

L

1

BW

1

3

2

Lg

MM

L

1

C

1

7

Cp

2

Cp

3

Cp

4

L

BW

8

C

1

LBW = 0.08nH, Lg = 0.36nh, L1 = 0.31nH, M = 0.12nH, C1 = 0.01pF,
Cp1 = 0.05pF, CP2 = 0.10pF, Cp3 = 0.05pF, Cp4 = 0.03pF

C

1

6

L

1

Cp

1

L

5

1

C

1

C

1

4

3

C

1

SOD-323

.05 pf

1

.2 pf

3

.47 nH

.02 pf

.47 nH

.02 pf .2 pf

2

Typical Performance Curves @ 25°C

(MA4E2054-287T)

Detector Output Voltage vs Frequency and
Load Resistance at -30 dBm. Diode Forward
Biased at 20µµµµA. Untuned Fixture (50ΩΩΩΩ)

10

(mV)

1

OUT

V

- - - - - - 1M o h m

________

100k ohms

0.1
024681012

FREQUENCY (GHz)

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacific: Tel.[phone], Fax [phone]
 Europe: Tel. [phone], Fax+ 44 (1 34 4) 30 0 020

__ __ __

__ . . __ . .

10k ohms

5k ohm s

Detector Output Voltage vs Input Power and
Load Resistance. Diode Forward Biased at
20µµµµA. Untuned Fixture at 9.375 GHz

10000

1000

100

(mV)

10

OUT

V

1

0.1

0.01

-50 -40 -30 -20 -10 0 10 20
INPUT POW ER (dBm)

- - - - - - 10 k ohm s

________

1M ohm

__ __ __

5k ohms

V 4.0

3

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