M A COM MA02305AK-SMB, MA02305AK-R7 Datasheet

3.0 V 100 mW RF Power Amplifier
IC for Bluetooth

V 1.00

MA02305AK

Features

n 20 dB Gain – dramatically increases range of your low

power Bluetooth devices

n Single 3.0V positive supply – operates over a wide

range of supply voltages

n Extremely small size – 6 pin SOT plastic package -

3 mm x 1.75 mm body size

n Output power easily controllable via V
n 45% Power Added Efficiency
n 100% Duty Cycle
n 2000 to 2900 MHz Operation
n Self-Aligned MSAG

®

-Lite MESFET Process

DD1

Description

The MA02305AK is an RF power am plifier based on M/A­COM’s Self-Aligned MSAG MESFET Process. This
product is designed for use in 2.4 GHz ISM products as a

booster for high power Bluetooth devices. Output power
can be controlled to meet Bluetooth requirements via vary­ing input power or the voltage on V

DD1

.

Ordering Information

Part Number Package

MA02305AK-R7 7 inch, 3000 Piece Reel

MA02305AK-SMB MA02305AK Test Board

MA02305AK

Maximum Ratings (T

Rating

DC Supply Voltage VDD 5.5 V

RF Input Power PIN 10 mW

Junction Temperature TJ 150 °C

Storage Temperature Range T

= 25 °C unless otherwise noted)

A

Symbol Value Unit

-40 to +150 °C

STG

Electrical Characteristics: V

Characteristic Symbol Min Typ Max Unit

Frequency Range ƒ 2400 2500 MHz

Output Power f = 2450 MHz P

Power Added Efficiency f = 2450 MHz η 40 45 %

Harmonics 2ƒ

Input VSWR - 1.5 2.0 :1

Off Isolation (VDD=0 V) S21 -25 dB

Thermal Resistance, junction to soldering point (pin 2) RTH 180 °C/W

Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = 0 dBm) - No Degradation in Power Output

Stability (P

= 0dBm, VDD = 0-5.5 V, Load VSWR = 5:1, fixed phases) - All non-harmonically related outputs

IN

= 2.5 V, V

DD1

= 3 V, P

DD2

= +0 dBm, Duty Cycle = 100%, T

IN

18.7 20 dBm

OUT

3ƒ

-30

-27

more than 60 dB below desired signal

A

-26

-22

= 25°C

dBc

3.0 V 100 mW RF Power Amplifier IC for Bluetooth

Output Power (dBm)

Pout (dBm), PAE

Pout (dBm), PAE

Typical Performance Curves

Output Power, Drain Currents, and Efficiency vs.
Frequency V

DD2

= 3 V , V

= 2.5 V, P

DD1

= 0 dBm

IN

MA02305AK

V 1.00

Output Power, Drain Currents and Efficiency vs.
Input Power V

= 3 V , ƒ = 2450 MHz, V

DD2

DD1

= 2.5V

50
40
30

65
55
45
35

20
10

Pout (dBm), PAE (%)

0

2300 2350 2400 2450 2500 2550 2600

Frequency (MHz)

25
15
5

Pout
PAE
Id1
Id2

Output Power, Drain Currents and Efficiency vs.
Supply Voltage
P

= 0 dBm , ƒ = 2450 MHz, V

IN

50
40
30
20
10

DD1

= 2.5 V

100
80
60
40
20

Pout (dBm), PAE (%)

0

0 1 2 3 4 5

VD2 (volts)

0

Pout
PAE
Id1
Id2

Id1, Id2 (mA)

Output Power, Drain Currents and Efficiency vs.
V
P

IN

Id1, Id2 (mA)

50
40
30

(%)

20
10

0

-15 -10 -5 0 5

Input Power (dBm)

for Power Control

DD1

= 0 dBm , ƒ = 2450 MHz, V

60

50

40

30
20

10

0

Pout (dBm), PAE (%)

-10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VD1 (volts)

DD2

= 3 V

100
80
60
40
20
0

70

60

50

40
30

20

10

0

Id1, Id2 (mA)

Pout
PAE
Id1
Id2

Id1, Id2 (mA)

Pout
PAE
Id1
Id2

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Harmonics
P

= 0 dBm , ƒ0 = 2450 MHz, V

IN

20
10

0

-10

-20

-30

-40
fo 2fo 3fo 4fo 5fo

= 2.5V, V

DD1

DD2

= 3V

Output Power, Input Return Loss and Efficiency
vs. Temperature
P

= 0 dBm , ƒ = 2450 MHz, V

IN

50
40
30

(%)

20
10

-40 25 80

Temperature (C)

= 2.5 V, V

DD1

= 3 V

DD2

-10

-15

-20

-25

-30

Input Return Loss (dB)

Pout
PAE
IRL