M A COM MA02203AD-R7, MA02203AD-R13 Datasheet

3.6 V, 450 mW DECT RF Power

V 1.0

GND

IN

GND

OUT

MA02203AD

Amplifier IC

Features

§ Ideal for DECT Applications

§ +26.5 dBm Output Power

§ 24.5 dB Power Gain

Functional Schematic

N/C

+V

DD1

N/C
+V

DD2

§ Single Positive Supply

§ Class A Bias

§ No External RF Matching Required

Description

The MA02203AD is a two stage power amplifier
designed for DECT applications to have an output
power of +26.5 dBm with an input power of 2 dBm.
This power amplifier operates at +3.6 volts with
35% typical power added efficiency. The

Pin Configuration

MA02203AD is mounted in a narrow body 16-pin
SOIC plastic package.

The MA02203AD is fabricated using M/A-COM’s
self-aligned MSAG®-Lite MESFET process for a low
single supply voltage, high power efficiency, and
excellent reliability.

This part is not recommended for new designs. M/A­COM’s MA02206GJ has superior RF performance
with less DC power consumption in a smaller
package. Pricing on the MA02206GJ is also less
than the MA02203AD.

Ordering Information

Part Number Description

MA02203AD-R7 7 inch, 1000 piece reel
MA02203AD-R13

13 inch, 3000 piece reel

GND

RF

GND
GND

N/C

16 pin narrow body SOIC

Pin Function Description

1 N/C Not Connected
2 V
3 GND Ground
4 GND Ground
5 RFIN RF Input
6 GND Ground
7 GND Ground
8 N/C Not Connected

9 N/C Not Connected
10 GND Ground
11 GND Ground
12 RF
13 GND Ground
14 GND Ground
15 V
16 N/C Not Connected

First Stage Supply Voltage

DD1

RF Output

OUT

Second Stage Supply Voltage

DD2

GND
RF
GND

GND
N/C

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Part Description

V 1.0

C, Load

3.6 V, 450 mW DECT RF Power Amplifier IC MA02203AD

Electrical Specifications: TS = 40 °C1, Z0 = 50 Ω Ω

Parameter Test Conditions Units Min Typ Max

Frequency MHz 1880 1900
Output Power dBm 25.5 26.5 27.5
Pout Frequency Dependency dB 0.2 0.5
Power Gain dB 24.5
Current Consumption mA 350 420
Input VSWR, PA On - 1.6:1 2.0:1
Input VSWR, PA Off V
Isolation, PA Off V
2nd Harmonics dBc 31
3rd Harmonics dBc 55

Thermal Resistance
Load Mismatch VDD = 4.6 V, VSWR = 10:1, PIN = 7 dBm - No degradation

Stability

1. Ts is the temperature measured at the soldering point of pin 11.

2. Unless otherwise specified, input power is +2 dBm, VDD is +3.6 V, and test frequency is 1890 MHz.

, V

DD1
DD1

= 0 V - 1.4:1 2.0:1

DD2

, V

= 0 V dB 40

DD2

Junction of 2nd stage FET to pin 11, Duty
Cycle=50%

P

= -3 to +7 dBm, V

IN

< P

< 450 mW, TS = -40 to +75 °

OUT

= 0 - 4.6 V, 0 mW

DD

VSWR = 10:1

2,3

o

C/W 63

- All spurs < -60 dBc

Absolute Maximum Ratings1

Parameter Absolute Maximum

Max Input Power +6 dBm
Operating Voltages +5.5 volts
Operating Temperature, Ts

-40 °C to +75 °C
Channel Temperature +150 °C
Storage Temperature -40 °C to +150 °C

1. Exceeding any one or combination of these limits may cause permanent damage.

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.