Datasheet MA02107AF-SMB, MA02107AF-R7, MA02107AF-R13 Datasheet (M A COM)

3.4 V, 1.2 W RF Power Amplifier IC

V 1.0

DD1

MA02107AF

Features

§ Ideal for Pager Applications

Functional Schematic

§ +30.8 dBm Output Power

DD2

§ 30.8 dB Power Gain

§ Single Positive Supply

§ Class AB Bias

§ 50 Ohm Input Impedance

§ Single Capacitor Output Match

Description

The MA02107AF is a three stage power amplifier,

V

N/C
GND
GND

RF IN

GND
GND

N/C

designed for paging applications to have an output
power of +30.8 dBm with an input power of 0 dBm.
This power amplifier operates at +3.4 volts with
55% typical power added efficiency. The
MA02107AF is mounted in a standard outline 16-pin
TSSOP plastic package.

The MA02107AF is fabricated using M/A-COM’s
self-aligned MSAG®-Lite MESFET process for a low
single supply voltage, high power efficiency, and
excellent reliability.

Ordering Information

Part Number Description

MA02107AF-R7 7 inch, 1000 piece reel
MA02107AF-R13
MA02107AF-SMB

13 inch, 3000 piece reel
Sample Test Board

Pin Configuration

Pin Function Description

1 V
2 N/C Not Connected
3 GND Ground
4 GND Ground
5 RFIN RF Input
6 GND Ground
7 GND Ground
8 N/C Not Connected

9 N/C Not Connected
10 GND Ground
11 GND Ground
12 RF
13 GND Ground
14 GND Ground
15 GND Ground
16 V

First Stage Supply Voltage

DD1

OUT/VDD3

RF Output/Third Stage Supply

Second Stage Supply Voltage

DD2

V
GND

GND
GND
RF OUT/VDD3
GND
GND
N/C

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Part Description

V 1.0

< +85ºC, RBW

3.4 V, 1.2 W RF Power Amplifier IC MA02107AF

Electrical Specifications: TS = 35 °C1, Z0 = 50 Ω Ω

Parameter Test Conditions Units Min Typ Max

Frequency MHz 900 942
Output Power dBm 30.0 30.8
Power Gain dB 30.8
Power Added Efficiency % 45 55
Input Return Loss dB 10 15
2nd Harmonics dBc -35 -29
3rd Harmonics dBc -50 -45
Thermal Resistance 3rd Stage FET to solder point of pin 13

+3.0 V < V

Stability

1. Ts is the temperature measured at the soldering point of pin 13.

2. Unless otherwise specified, input power is 0 dBm, VDD is +3.45 V, and test frequency is 900 MHz.

3. The output is externally matched to 50 ohms.

VSWR < 5:1, -40ºC < T
= 3 MHz max hold

< +5.0 V, P

CC

< +31 dBm,

OUT

C

2,3

o

C/W 41

All spurs < -60 dBc

Absolute Maximum Ratings1

Parameter Absolute Maximum

Max Input Power +6 dBm
Operating Voltages +5.0 volts
Operating Temperature, Ts
Channel Temperature +150 °C
Storage Temperature -40 °C to +150 °C

1. Exceeding any one or combination of these limits may cause permanent damage.

-40 °C to +70 °C

Application Information

Static Sensitivity

Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when
handling these devices.

Board Layout

Sample Test Board 50 Ohm Lead Transition

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Part Description

V 1.0

η

VSWR

3.4 V, 1.2 W RF Power Amplifier IC MA02107AF

Output Match Impedance (as seen from pin 12)

170

0.2

0

0.5

1

180

900 MHz

8.4 - j9.2

ΩΩ

-170

-160

925 MHz

850 MHz

-150

-140

-130

-120

-110

-100

-90

-80

Typical Performance Curves

Output Power and PAE vs. Input Power

40

35

60

50

Output Power, PAE, and VSWR vs. Fequency

60

50

η

3:1

30

25

20

, Output Power (dBm)

OUT

P

15

10

-10 -5 0 5

P

OUT

PIN, Input Power (dBm)

ƒ = 901 MHz
VDD = 3.4 V

Output Power and PAE vs. Supply Voltage

35

30

25

20

15

, Output Power (dBm)

10

OUT

P

5

η

POUT

ƒ

= 901 MHz

PIN = 0 dBm

40

30

20

Pwr Added Efficiency

10

0

70

60

50

40

30

20

η, Pwr Added Efficiency (%)

10

40

30

(dBm) and (%)

20

OUT

P

10

0

800 850 900 950 1000

ƒ, Frequency (MHz )

P

OUT

Harmonics

40

30

20

10

0

-10

, Output Power (dBm)

OUT

-20

P

-30

ƒο = 901 MHz

PIN = 0 dBm
VDD = 3.4 V

2:1

1:1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDD, Supply Voltage (Volts)

0

-40

ƒο 2ƒο 3ƒο 4ƒο 5ƒο

Frequency

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Part Description

V 1.0

RF

INPUT

+

VDD(+3.4V)

RF

OUTPUT

T1

12345

678910

1112131415

16

3.4 V, 1.2 W RF Power Amplifier IC MA02107AF

Application Schematic

C1 C2

L1

N/C

C3

N/C N/C

List of components:

C1 = 0.1µF Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C4 = 6.8 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL)
C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.19" of 50 ohm grounded coplanar waveguide (60 mil GETEK board)

TSSOP-16 Package

Dimensions in

millimeters

SYMBOL MIN NOM MAX MIN NOM MAX

A 1.05 1.10 1.20 0.041 0.043 0.047
A1 0.05 0.10 0.15 0.002 0.004 0.006
A2 — 1.00 1.05 — 0.039 0.041

b 0.20 0.25 0.28 0.008 0.010 0.011

C — 0.127 — — 0.005 —
D 4.90 5.075 5.10 0.193 0.200 0.201
E 6.20 6.40 6.60 0.244 0.252 0.260

E1 4.30 4.40 4.50 0.169 0.173 0.177

e — 0.65 — — 0.025 —

L 0.50 0.60 0.70 0.020 0.024 0.028
L1 0.90 1.00 1.10 0.035 0.039 0.043

y — — 0.10 — — 0.004

θ

0° 4° 8° 0° 4° 8°

Dimensions in inches

C5

C4

NOTES:

1. Controlling dimension: mm

2. Lead frame material: EFTEC 64

3. Dimension “D” does not include mold flash, protrusions or gate burrs

4. Dimension “E” does not include interlead flash or protrusions

5. Tolerance: ±0.254 mm (±0.010″) unless otherwise specified

6. End flash max: 0.12 mm (0.005 ″)

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]