M A COM MA02104AF Datasheet

MA02104AF

3.6V 1.2W RF Power Amplifier IC
for N-PCS/ISM900

Applications

Two-Way Paging
Wireless Modems
Cordless Telephones
Telemetry
900 MHz ISM

V

DD1

N/C
GND
GND

RF IN

GND
GND

N/C

V

DD2

GND
GND
GND
RF OUT/V

GND
GND
N/C

DD3

Features

•= Single Positive Supply

•= 16 Pin TSSOP Plastic Package

•= Class AB Bias

•= 800 - 1000 MHz Operation

•= 50Ω Input Impedance

•= Single Capacitor Output Match

•= Self-Aligned MSAG

•= Guaranteed Stability and Ruggedness

®

-Lite MESFET Process

Typical 3.6 Volt Performance

30.8 dBm Power Output

30.8 dB Power Gain
60% Drain Efficiency (output stage FET)
45% Power Added Efficiency

-36 dBc 2nd Harmonic

-54 dBc 3

rd

Harmonic

ELECTRICAL CHARACTERISTICS V

Characteristic Symbol Min Typical Max Unit

=3.6 V, PIN=0 dBm, TS=40 °C (Note 1), Output externally matc hed to 50 Ω System.

DD

Frequency Range ƒ 900 942 MHz
Output Power, f = 900 MHz P
Power Added Efficiency , f = 900 MHz
Harmonics 2ƒ

30.4 30.9 31.5 dBm

OUT

η

o

3ƒo

40 45 %

−36

−54

-31

-40

dBc
dBc

Input VSW R — 1.4:1 2.0:1 —
Thermal Resistance (Junction of 3

pin 13)

Load Mismatch (V
Stability (P

Load VSWR = 8:1)
Note 1: TS is the temperature measured at the soldering point of pin 13, mounted on 60 mil GETEK evaluation board in a free air condition with

= -15 to +3 dBm, VDD = 3.6, 4.6 V, TS = -40 to +100 °C,

IN

ambient room temperature T
under room temperature conditions and CW operation, unl ess otherwise specified.

= 4.6 V, P

DD

rd

stage FET to solder point of

= +3 dBm, VSWR = 8:1) —

IN

=25 °C. The electrical data pres ent ed herei n was t aken with the evaluation board shown in Figures 1 and 6,

A

47 °C/W

R

TH J-S

No Degradation in Power Output

—

All non-harmonically related outputs

more than 60 dB below desired signal

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacific: Tel. [phone], Fax [phone]
 Europe: Tel. [phone], Fax [phone]

Visit www.macom.com for additional data sheets and product information

901753 G

3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900 MA02104AF

V

(

)

MAXIMUM RATINGS (T

Rating Symbol Value Unit

DC Supply Voltage (Pins 1, 12, 16) V
RF Input Power PIN 4 mW
Junction Temperature TJ 150 °C
Storage Temperature Range T

APPLICATION INFORMATION

DD

+

+3.6V

= 25 °C unless otherwise noted)

A

C1 C2

5 Vdc

DD

-40 to +150 °C

STG

INPUT

RF

C3

1

2

N/C

3

4

5

6

7

8

N/C N/C

16

15

14

13

12

T1

11

10

9

L1

C4

Figure 1. Evaluation Board Schematic

List of components:

C1 = 0.1µF Kemet multilayer ceramic chip capacitor ( C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C4 = 7.5 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5T XL)
C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block ; C11AH101K5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.13" of 50 Ω==g r ounded coplanar waveguide (60 m il GETEK board)

OUTPUT

RF

C5

Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 6.

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacific: Tel. [phone], Fax [phone]
 Europe: Tel. [phone], Fax [phone]

Visit www.macom.com for additional data sheets and product information

901753 G