M A COM LF2810A Datasheet
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RF MOSFET Power Transistor, IOW, 28V
500 - 1000 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
Applications
Broadband Linear Operation
500‘tiHz to 1200 MHz
Absolute Maximum Ratings at 25°C
LF281 OA
Electrical Characteristics at 25°C
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
C
ass
C
RSS
GP
q0
VSWR-T -
F
G
H
J
K
L
10 pF
4.8 pF
10 - dB
50 -
2O:l - V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .O GHz
V,,=28.0 V, F=l .O MHz
V,,=26.0 V, F=l .O MHz
V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .O GHz
V,,=28.0 V, I,,,=1 00 mA, P,,=lO.O W, F=l .O GHz
%
6.22 6048 ,245
Ll4 1.40 ,045
2.92 310 .I15
L40 1.65 ,055
1.96 2.46 -077
3.61 4.37 642
z?ss
.055
x5
,065
,097
572
Specifica!ions Subject to Change Without Notice.
RF MOSFET Power Transistor, IOW, 28V LF281 OA
v2.w
Typical Broadband Performance Curves
20
CAPACITANCES vs VOLTAGE
F=l .O MHz
GAIN vs FREQUENCY
V,,=28 V I,,=100 mA Po,,=lO W
5.5
POWER OUTPUT vs VOLTAGE
F=l.OGHz P,,=l.O W l,o=lOO mA
5
10
15
20
v,, (V)
25
30
36
EFFICIENCY vs FREQUENCY
V,,,=28 V l,o=lOO mA Po,,=l 0 W
1
iii
500
700 1000
FREQUENCY (MHz)
12w
500 750 1000 1250 1400
POWER OUTPUT vs POWER OUTPUT
V,,=28 V I,,=200 mA
0
0.5
1
POWER INPUT(W)
1.5
2
2.5
FREQUENCY (MHz)
3
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