M A COM LF2805A Datasheet
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RF MOSFET Power Transistor, 5W, 28V
500 - 1000 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
AppIications
. *Broadband Linear Operation
500 MHz to 1400 MHz
Absolute Maximum Ratings at 25°C
LF2805A
Electrical Characteristics at 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Symbol
BV,,, 65 - V
‘Dss I
GSS
V
GSCTW
GM
C
ISS
C
oss
C
RSS
GP
‘1D
VSWR-T - 2O:l -
Min Max Units
V,,=O.O V, 1,,=2.0 mA
1.0 mA
1.0 p-4
2.0 6.0 V
80 - mS V&O.0 V, i&00.0 mA, AVGs=l .O V, 80 us Puke
7
5
2.4 pF
10 50 -
V,,=28.0 V, V,,=O.O V
v,,=20 v, v,,=o.o v
V&O.0 V, l,,=lO.O mA
V&8.0 V, F-l.0 MHz
PF
V,,=28.0 V, F-1 .O MHz
PF
V,,=28.0 V, F=l .O MHz
V,,d8.0 V, I,,=50 mA, PO,+0 W, F=l .O GHz
dB
V,,=28.0 V, I,,=50 mA, P,s5.0 W, F=l .O GHz
%
V,,=28.0 V, I,,=50 mA, P,&%O W, F=l .O GHz
lest Conditions
RF MOSFET Power Transistor, 5W, 28V
Typical Broadband Performance Curves
LF2805A
v2.00
s
‘0
210
z
20
15
7
5 -
CAPACITANCES vs VOLTAGE
F=l .O MHz
GAIN vs FREQUENCY
V,,=28 V I,,=50 mA P0,,=5.0 W
7
6 -
POWER OUTPUT vs VOLTAGE
F=l .O GHz P,,=O.5 W I,,=50 mA
EFFICIENCY vs FREQUENCY
V,,=28 V I,,=50 mA P,,=5.0 W
500
700
FREQUENCY (MHz)
1000
POWER OUTPUT vs POWER OUTPUT
I;- p-p=
3 2i?
1
0
0 0.05
1400
V,,=28 V I,,=50 mA
02 0.4
POWER INPUT (W)
500
0.6 0.6
750
FREQUENCY (MHz)
1
1000
1250
1400
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