MACOM FH2164 Datasheet

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RF MOSFET Power Transistor, SW, 12V

30 - 90 MHz

Features

l N-Channel Enhancement Mode Device
l Meets CECOM Drawing A3012715

l Designed for Frequency Hopping Systems
l 30-90 MHz
l Lower Capacitances for Broadband Operation
l Lower Noise Figure Than Bipolar Devices

FH2164

Electrical Characteristics at 25°C

VD,=28.0 V, F=l .O MHz’
Output Capacitance
Reverse Capacitance

Power Gain
Drain Efficiency
Load Mismatch Tolerance

* Per side

Specifications Subject to Change Without Notice.

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ass

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RSS
GP
90

VSWR-T - 2O:l - V,,=12.0 V, 1,0=600 mA, P0,e8.0 W, F=88 MHz

13 -

55 -

9-66

North America: Tel. [phone] n Asia/Pacific: Tel. [phone]

Fax [phone]

40 pF V,,=28.0 V, F=l .O MHz’

8

V,,=28.0 V, F=l .O MHz’

PF

VD,=12.0 V, l&j00 mA, P,,.r=8.0 W, F=88 MHz

dB

% V,,=12.0 V, l,Q=600 mA, P,,,=8.0 W, F=88 MHz

Fax [phone]

M/A-COM, inc.

Europe: Tel. [phone]

B

Fax [phone]