MACOM DU2880V Datasheet

an AMP company

RF MOSFET Power Transistor, 8OW, 28V

2 - 175 MHz

Features

. N-Channel Enhancement Mode Device

l DMOS Structure

l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices

Absolute Maximum Ratings at 25°C

Parameter Symbol

Drain-Source Voltage

1 Gate-Source Voltage

Drain-Source Current

Power Dissipation
( JunctionTemperature 1 T, I ZOO I
I StorageTemperature ( T,,, ( -55 to +150 ( “‘2 (

Thermal Resistance 0

V

OS

I VGS I 20 I ” I

‘OS
P,

JC

Rating Units

65

8’

206

0.65 “CM,

I ”

A

w

“C I

DU2880V

Electrical Characteristics at 25°C

* Per Side

Specifications Subject to Change Without Notice.

North America:

Tel. [phone]
Fax [phone]

M/A-COM, Inc.

n Asia/Pacific: Tel. [phone] n Europe: Tel. [phone]

Fax [phone] Fax [phone]

RF MOSFET Power Transistor, 8OW, 28V

Typical Broadband Performance Curves

DU2880V

v2.00

GAIN vs FREQUENCY

V,,=28 V I,,=400 mA PO,=80 W

m^

0

g 20
d

10

25 50

FREQUENCY (MHz)

100 150

POWER OUTPUT vs POWER INPUT

,20 , V,,=28V I,,=400 mA ,

175

EFFICIENCY vs FREQUENCY

V,,=28 V I,,=400 mA P,,=80 W

‘O /

50

25

50

100

FREQUENCY (MHz)

POWER OUTPUT vs SUPPLY VOLTAGE

90 1

75 -

F=l75 MHz I,,=400 mA P,,=l.5 W

125

I

15

0 ' I

0 0.2

0.4

0.6 1

1.5 2

2.5

3 3.5

16

POWER INPUT(W)

Specifications Subject to Change Without Notice.

M/A-COM, Inc.

Nor!h America: Tel. [phone] n Asia/Pacific: Tel. [phone]

Fax [phone]

Fax [phone]

20

25

SUPPLY VOLTAGE(V)

Europe: Tel. [phone]

Fax [phone]

30