MACOM DU2880U Datasheet

RF MOSFET Power Transistor, 8OW, 28V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices

Absolute Maximum Ratings at 25°C

DU2880U

1U

M/A-COM, Inc.

Speciftcations Subject to Change Without Notice.

North America: Tel. [phone]

Fax [phone]

n Asia/Pacific: Tel. [phone]

Fax [phone]

Europe: Tel. [phone]

w

Fax [phone]

RF MOSFET Power Transistor, 8OW, 28V

Typical Broadband Performance Curves

DU2880U

v2.00

EFFICIENCY vs FREQUENCY

I’,,=28 V I,,=400 mA P,,,=80 W

25

120 )

30 MHz

loo

5 175 MHz
2 80 100 MHz

k
z 80

50 100

FREQUENCY (MHz)

POWER OUTPUT vs POWER INPUT

V,,=28 V lDQ=400 mA

150 175

GAIN vs FREQUENCY

25

.”

25 50 100

FREQUENCY (MHz)

POWER OUTPUT vs SUPPLY VOLTAGE

I,,=400 mA F-175 MHz P,,=3.0 W

I

120 .

loo -

f 80.

150

175

40

20

5

F

0:

0.1 0.2 0.3

1

2 3

POWER INPUT(W)

4

5

01

13 75 20 25 30 33

SUPPLY VOLTAGE(V)

Typical Device Impedance

Frequency (MHz)

30

1 50

100

I ~~

175

z,, (OHMS)

5.4 - i 4.4 5.7 + j 4.7
1 2.5 - j 4.4
1 1.6-j3.4

0.7 - j 1.2

V,,=28 V, I,,=400 mA, P,,,=80 Watts

Z,, is the series equivalent input impedance of the device from gate to source.
Z

LOAD is the optimum series equivalent load impedance as measured from drain to ground.

2

LOAD (OHMS)

1 3.4 + j 3.5
1 2.4 + j 2.4

1.7+jO.8

I
I

Specifications Subject to Change Without Notice.

North America: Tel. [phone]

Fax [phone]

s Asia/Pacific: Tel. [phone]

Fax [phone]

MIA-COM, Inc.

Europe: Tel. [phone]

=

Fax [phone]